Publication:
Analysis on Square and Circular Inductor for a High Q-Factor Inductor

cris.author.scopus-author-id 57218550695
cris.author.scopus-author-id 35208616600
cris.author.scopus-author-id 55229582100
cris.author.scopus-author-id 36809748400
cris.author.scopus-author-id 24554644300
cris.virtual.department Universiti Malaysia Perlis
cris.virtual.department Universiti Malaysia Perlis
cris.virtual.department Universiti Malaysia Perlis
cris.virtual.department Universiti Malaysia Perlis
cris.virtual.department Universiti Malaysia Perlis
cris.virtualsource.department d1d2940a-bd60-47c8-a84e-0b64261e1f27
cris.virtualsource.department d0341915-f357-4f0f-bc25-fb9300c954e0
cris.virtualsource.department 6c20a46a-aca6-4a9e-90cc-1dbbacaba95e
cris.virtualsource.department 8ed7991f-b2ea-4a89-9df7-1803379c2594
cris.virtualsource.department 7216cbe3-5d57-4bdc-8886-abe63227d530
dc.contributor.author Nur Anira Asyikin Hashim
dc.contributor.author Nazuhusna Khalid
dc.contributor.author Nurul Izza Mohd Nor
dc.contributor.author Shahrir Rizal Kasjoo
dc.contributor.author Zaliman Sauli
dc.date.accessioned 2024-09-28T01:22:22Z
dc.date.available 2024-09-28T01:22:22Z
dc.date.issued 2021-12-01
dc.description.abstract This paper presents the high-quality (Q) factor inductors using Silicon-on-sapphire (SOS) for the 10GHz to 20GHz frequency band. Inductors are designed on SOS because of their advantages, including high resistivity and low parasitic capacitance. This paper compares square and circular inductor topologies for high-quality (Q) factor inductors using HFSS software for the high-frequency band. Both inductors have been designed with the same width and thickness to make them comparable with each other. The comparison shows that a circular inductor achieves the highest Q-factor. Furthermore, the circular and square inductor's Q-factor, inductance, and resistance are analyzed. As a result, the circular inductor has the maximum Q-factor of 89.34 at 10.6GHz for 0.29nH, while the square inductor has obtained a maximum Q-factor of 80.72 at 10GHz for 0.40nH inductance.
dc.identifier.scopus 2-s2.0-85126083861
dc.identifier.uri https://hdl.handle.net/20.500.14170/5065
dc.relation.grantno undefined
dc.relation.ispartof International Journal of Nanoelectronics and Materials
dc.relation.ispartofseries International Journal of Nanoelectronics and Materials
dc.relation.issn 19855761
dc.subject HFSS Software | High Q-Factor Inductor | Silicon-on-Sapphire (SOS)
dc.title Analysis on Square and Circular Inductor for a High Q-Factor Inductor
dc.type Journal
dspace.entity.type Publication
oaire.citation.endPage 147
oaire.citation.issue Special Issue InCAPE
oaire.citation.startPage 141
oaire.citation.volume 14
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.author.affiliation Universiti Malaysia Perlis
oairecerif.author.affiliation Universiti Malaysia Perlis
oairecerif.author.affiliation Universiti Malaysia Perlis
oairecerif.author.affiliation Universiti Malaysia Perlis
oairecerif.author.affiliation Universiti Malaysia Perlis
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person.identifier.scopus-author-id 57218550695
person.identifier.scopus-author-id 35208616600
person.identifier.scopus-author-id 55229582100
person.identifier.scopus-author-id 36809748400
person.identifier.scopus-author-id 24554644300
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