Publication:
Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method
Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method
Date
2009-07
Authors
Naser M. Ahmed
Zaliman Sauli
Uda Hashim
Yarub Al-Douri
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Research Projects
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Abstract
The design of optoelectronic devices fabricated from III-Nitride materials is aided by knowledge of refractive index and absorption coefficient of these materials .The optical
properties of Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN grown by MOVPE on sapphire were investigated by means of transmittance measurements .The optical transmission method is
successfully used to determine the refractive index (n), absorption coefficient (α), film thickness and energy gap of three samples of film over the spectral range of (1-5 eV)
Description
Keywords
Absorption coefficient,
Refractive index,
Optical properties,
III-Nitride energy band gap