The vibration properties and the mechanical characteristic are important for the stability of electronics devices, particularly for Nano devices with high potential application. Silicon Nanowire show different properties from the corresponding bulk silicon. The understanding of its behaviour with reliable theoretical model explain the relation between size effect of the nanowire and the vibration frequency is significant to reveal the mechanical behaviour of the device is very important. Thus, this study, present the effect of small diameter of Silicon Nanowires on Its Vibration Properties is established based on the lattice parameters and the binding energy change of silicon nanowire based on first principles calculations through Abinit. Atomic interaction of the SiNWs obtained based on the density functional theory. It was observed that the atomic interaction energy as result of electromechanically induced pressure due -hole pair in which electron (e-) was reductive, and hole (h+) was oxidative. The hole (h+) reacted with e- in the second nanowire, generating free radicals (e-), superoxide anion and perhydroxyl radicals which create phonon group velocity this create vibration. Due to the excessive energy of process the temperature rises and alters the atomic cubic dimensions in turn affect its elastic properties. The nanowire compared with with bulk silicon exhibit high higher modulus, this as result of damped behaviour of the nanowire which is due to the high frequency vibration of silicon atoms at the edge of SiNWs and its Debye length is shorter. As the wire diameter decrease effect of the atomic vibration is reduced.
