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Comprasion of the physical of the properties for CdS and CdS doped PVA thin films prepared by spray pyrolysis

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dc.contributor.author Nathera Abass Ali Al-Tememee
dc.date.accessioned 2024-05-02T07:30:09Z
dc.date.available 2024-05-02T07:30:09Z
dc.date.issued 2013-01
dc.description.abstract Cadmium sulphide (CdS) and CdS doped with PVA semiconductor thin films were prepared by chemical pyrolysis technique. The thickness of the films was varied in the range (1.281, 1.367, 1.421, 1.485) μm and (1.722, 1.776, 1.873, 1.938) μm for CdS and PVA doped films respectively. This parameter has effected the physical properties of the specimens. The films were characterized by X-ray diffraction (XRD). XRD patterns were indicated the presence of hexagonal phase of CdS, and with the increase of film's thickness the grain size has increased. The optical absorption spectra showed that the CdS films have a direct band gap value (2.4-2.55) eV and (2.425-2.75) eV for doped samples with PVA.
dc.identifier.uri https://ijneam.unimap.edu.my/
dc.identifier.uri https://ijneam.unimap.edu.my/images/PDF/IJNEAM%20No.%201%202013/IJNEAM-6_No-1_3_17-28.pdf
dc.identifier.uri https://hdl.handle.net/20.500.14170/2370
dc.language.iso en
dc.relation.ispartof International Journal of Nanoelectronics and Materials (IJNeaM)
dc.relation.issn 1985-5761
dc.subject CdS
dc.subject PVA
dc.subject Thin films
dc.title Comprasion of the physical of the properties for CdS and CdS doped PVA thin films prepared by spray pyrolysis
dc.type Resource Types::text::journal::journal article
dspace.entity.type Publication
oaire.citation.endPage 28
oaire.citation.issue 1
oaire.citation.startPage 17
oaire.citation.volume 6
oairecerif.author.affiliation University of Baghdad
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International Journal of Nanoelectronics and Materials (IJNeaM)