Cadmium sulphide (CdS) and CdS doped with PVA semiconductor thin films were prepared by chemical pyrolysis technique. The thickness of the films was varied in the range (1.281, 1.367, 1.421, 1.485) μm and (1.722, 1.776, 1.873, 1.938) μm for CdS and PVA doped films respectively. This parameter has effected the physical properties of the specimens. The films were characterized by X-ray diffraction (XRD). XRD patterns were indicated the presence of hexagonal phase of CdS, and with the increase of film's thickness the grain size has increased. The optical absorption spectra showed that the CdS films have a direct band gap value (2.4-2.55) eV and (2.425-2.75) eV for doped samples with PVA.
