ZnO nanorods were grown on thermally oxidized p-type silicon substrate using sol-gel method. The SEM image revealed high-density, well-aligned, and perpendicular ZnO nanorods on the oxidized silicon substrate. The XRD profile confirmed the<jats:italic>c</jats:italic>-axis orientation of the nanorods. PL measurements showed the synthesized ZnO nanorods have strong ultraviolet (UV) emission. The electrical characterization was performed using interdigitated silver electrodes to investigate the stability in the current flow of the fabricated device under different ultraviolet (UV) exposure times. It was notified that a stable current flow was observed after 60 min of UV exposure. The determination of stable current flow after UV exposure is necessary for UV-based gas sensing and optoelectronic devices.
