Now showing 1 - 3 of 3
  • Publication
    Progression in the growth of cylindric nanostructures: carbon nanotubes (CNTs) and carbon nanofibers (CNFs) on graphene
    ( 2022-12) ; ;
    H.A. Hanafi
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    Mishthafiyatillah
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    ; ;
    Mohamad Nazri Abdul Halif
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    ;
    A.F. Abd Rahim
    The combination of carbon nanotubes (CNTs) and graphene produce a CNTs-graphene hybrid material with excellent electrical and mechanical properties that improved from their single form. This CNTs-graphene hybrid material has the potential to be used as electrodes and interconnects as it has better properties compared to copper (Cu). This work intended to grow CNTs on graphene using a CVD technique. The growth process used graphene on a Cu substrate with ferrocene as the catalyst, acetone as the carbon precursor and reactor temperature of 800oC. However, the process has unintentionally grown carbon nanofibers (CNFs). To observe the progression in the growth of CNTs and CNFs on graphene, the effect of growth reaction time is crucial. Hence, this work investigates the growth progression of the CNTs and CNFs on graphene based on different reaction times of 10 min, 20 min, 30 min and 60 min. It was found that the agglomeration of carbon is incomplete at 10 min reaction time and produced cylindric nanostructures. A further reaction time of 20 min and 30 min has significantly changed the size of the cylindric nanostructures into CNTs and CNFs with a very slight difference in the size, density, and coverage. The 30 min reaction time produced denser CNTs and CNFs with more uniform size and coverages. A longer reaction time of 60 min led to very long CNFs with an average length of 120 μm. In conclusion, meticulous fine-tuning of the reaction time is required to control the formation of CNTs and CNFs on graphene.
  • Publication
    A controlled growth of carbon nanofibers (CNFs) on graphene
    ( 2023-12)
    Mishtha Fiyatillah
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    ; ;
    L K Wisnu Kita
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    ; ;
    A F Abd Rahim
    Carbon nanofibers (CNFs) have superior properties such as high conductivity, good mechanical strength, high specific surface area, and chemical stability. CNFs-graphene hybrid material can be used as a high-quality electrode in electronics applications. In the CNFs on graphene synthesis, the growth parameters must be well controlled. This work observes the evolution of the CNF's growth on graphene on Ni at reaction temperatures of 800oC and 860oC and at different reaction times of 30 min, 60 min, and 120 min. This research aims to find suitable conditions for obtaining controllable growth of CNFs on graphene. Based on the SEM measurement, it was found that the 860oC reaction temperature at 60 min and 120 min reaction time led to longer and smaller widths of CNFs with high coverage and distribution on graphene. The CNFs on graphene formation were confirmed by the XRD analysis.
  • Publication
    Impact of nanowire radius and channel thickness with high-k gate dielectric in GAA-JLT
    ( 2023-12)
    Nilaventhiran Vespanathan
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    ; ;
    Alhan Farhanah Abd Rahim
    As the transistor’s size becomes smaller, degradation in the short-channel effects (SCEs) becomes more apparent. This leads to research work on multi-gate transistors such as the Fin-Field Effect Transistor (FinFET) and Gate-All-Around (GAA) transistor, where the 3D architecture have been shown to have superior performance as compared to conventional planar transistor. Transistor without junctions (JLT) which realizes a single type of doping has also been gaining popularity for biosensor applications due to its superior electrostatic performances in terms of Drain-Induced Barrier Lowering (DIBL), off-state leakage current (Ioff) and Subthreshold Slope (SS). In this work, the impact of changes in parameters such as the gate oxide material, nanowire radius and channel thickness toward the performance of a Gate-all-around JLT (GAA-JLT) have been studied using TCAD simulator. It was found that smaller nanowire radius and thicker channel produces lower DIBL, Ioff and SS, with the use of HfO2 as gate oxide materials shows better results than Si3N4. Meanwhile, the impact of parameters variations seemed to be negligible on the on-state current (Ion). The outcome of this work can be used as a basis to understand the impact of structural parameters variations towards the performance of a more complex GAA-JLT structure.