Syarifah Norfaezah Sabki
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Preferred name
Syarifah Norfaezah Sabki
Official Name
Syarifah Norfaezah, Sabki
Alternative Name
Sabki, S. N.
Sabki, Syarifah N
Norfaezah Sabki, S
Sabki, Syarifah Norfaezah Binti
Main Affiliation
Scopus Author ID
35090423100
Researcher ID
GBY-6284-2022

Research Output
Now showing 1 - 4 of 4
  • Publication
    Progression in the growth of cylindric nanostructures: carbon nanotubes (CNTs) and carbon nanofibers (CNFs) on graphene
    ( 2022-12)
    Syarifah Norfaezah Sabki
    ;
    Norzilah Abdul Halif
    ;
    H.A. Hanafi
    ;
    Mishthafiyatillah
    ;
    Muhammad Asri Idris
    ;
    Norashiken Othman
    ;
    Mohamad Nazri Abdul Halif
    ;
    Norhayati Sabani
    ;
    A.F. Abd Rahim
    The combination of carbon nanotubes (CNTs) and graphene produce a CNTs-graphene hybrid material with excellent electrical and mechanical properties that improved from their single form. This CNTs-graphene hybrid material has the potential to be used as electrodes and interconnects as it has better properties compared to copper (Cu). This work intended to grow CNTs on graphene using a CVD technique. The growth process used graphene on a Cu substrate with ferrocene as the catalyst, acetone as the carbon precursor and reactor temperature of 800oC. However, the process has unintentionally grown carbon nanofibers (CNFs). To observe the progression in the growth of CNTs and CNFs on graphene, the effect of growth reaction time is crucial. Hence, this work investigates the growth progression of the CNTs and CNFs on graphene based on different reaction times of 10 min, 20 min, 30 min and 60 min. It was found that the agglomeration of carbon is incomplete at 10 min reaction time and produced cylindric nanostructures. A further reaction time of 20 min and 30 min has significantly changed the size of the cylindric nanostructures into CNTs and CNFs with a very slight difference in the size, density, and coverage. The 30 min reaction time produced denser CNTs and CNFs with more uniform size and coverages. A longer reaction time of 60 min led to very long CNFs with an average length of 120 μm. In conclusion, meticulous fine-tuning of the reaction time is required to control the formation of CNTs and CNFs on graphene.
      2  36
  • Publication
    A controlled growth of carbon nanofibers (CNFs) on graphene
    ( 2023-12)
    Mishtha Fiyatillah
    ;
    Syarifah Norfaezah Sabki
    ;
    Norzilah Abdul Halif
    ;
    L K Wisnu Kita
    ;
    Muhammad Asri Idris
    ;
    Noraini Othman
    ;
    A F Abd Rahim
    Carbon nanofibers (CNFs) have superior properties such as high conductivity, good mechanical strength, high specific surface area, and chemical stability. CNFs-graphene hybrid material can be used as a high-quality electrode in electronics applications. In the CNFs on graphene synthesis, the growth parameters must be well controlled. This work observes the evolution of the CNF's growth on graphene on Ni at reaction temperatures of 800oC and 860oC and at different reaction times of 30 min, 60 min, and 120 min. This research aims to find suitable conditions for obtaining controllable growth of CNFs on graphene. Based on the SEM measurement, it was found that the 860oC reaction temperature at 60 min and 120 min reaction time led to longer and smaller widths of CNFs with high coverage and distribution on graphene. The CNFs on graphene formation were confirmed by the XRD analysis.
      3  33
  • Publication
    Hexagonal enhanced porous GaN with delayed integrated pulse electrochemical (iPEC) etching
    ( 2024-10)
    Nurul Syuhadah Mohd Razalia
    ;
    Alhan Farhanah Abd Rahim
    ;
    Nur Sabrina Mohd Hassan
    ;
    Rosfariza Radzali
    ;
    Ainorkhilah Mahmood
    ;
    Syarifah Norfaezah Sabki
    ;
    Irni Hamiza Hamzah
    ;
    Mohaiyedin Idris
    ;
    Mohamed Fauzi Packeer Mohamed
    This present study investigates the effect of time delay (Td) on the formation of porous GaN (P-GaN) using integrated pulse electrochemical (iPEC) etching. Porous GaN (P-GaN) was formed by etching an N-type GaN wafer with a 4% KOH electrolyte for 60 minutes under an ultraviolet (UV) lamp at a current density of 80 mA/cm2. A Td of 120 minutes was applied before electrochemically etching the P-GaN sample. The top view image of the field emission scanning electron microscopy (FESEM) revealed a significant difference when a Td was applied. A dense and uniform hexagonal P-GaN was obtained from the Td iPEC sample, while the non-Td sample exhibited a multi-layered hexagonal porous structure with unfinished pore-etched areas. Higher porosity and deeper pores were observed in the Td sample. Intense high-resolution X-ray diffraction (HR-XRD) peak intensity was observed in the Td iPEC sample with a lower full width half maximum (FWHM), indicating that the sample had better crystallinity. The Raman spectra of the sample anodized with a Td exhibited higher Raman peak intensity and a slight shift to a higher frequency concerning as-grown GaN, indicating better crystallinity and a tensile stress relaxation of 0.24 GPa. Post etching, a blue shift of the photoluminescence (PL) peak, from 364 nm (as-grown GaN) to 363 nm (P-GaN), was observed, and a small PL peak started to form around 385 nm compared to the as-grown GaN due to the relaxation of the tensile stress, which modified the bandgap. The PL peak intensity of the Td sample was higher than the non-Td sample, indicating that the porosity and uniformity allowed more light interaction with the material, resulting in more efficient photon absorption and emission. The results indicated that potentially efficient optoelectronics devices can be fabricated on a P-GaN using a combination of electroless and electrochemical etching of the GaN epitaxial layer.
      22  2
  • Publication
    Impact of nanowire radius and channel thickness with high-k gate dielectric in GAA-JLT
    ( 2023-12)
    Nilaventhiran Vespanathan
    ;
    Noraini Othman
    ;
    Syarifah Norfaezah Sabki
    ;
    Alhan Farhanah Abd Rahim
    As the transistor’s size becomes smaller, degradation in the short-channel effects (SCEs) becomes more apparent. This leads to research work on multi-gate transistors such as the Fin-Field Effect Transistor (FinFET) and Gate-All-Around (GAA) transistor, where the 3D architecture have been shown to have superior performance as compared to conventional planar transistor. Transistor without junctions (JLT) which realizes a single type of doping has also been gaining popularity for biosensor applications due to its superior electrostatic performances in terms of Drain-Induced Barrier Lowering (DIBL), off-state leakage current (Ioff) and Subthreshold Slope (SS). In this work, the impact of changes in parameters such as the gate oxide material, nanowire radius and channel thickness toward the performance of a Gate-all-around JLT (GAA-JLT) have been studied using TCAD simulator. It was found that smaller nanowire radius and thicker channel produces lower DIBL, Ioff and SS, with the use of HfO2 as gate oxide materials shows better results than Si3N4. Meanwhile, the impact of parameters variations seemed to be negligible on the on-state current (Ion). The outcome of this work can be used as a basis to understand the impact of structural parameters variations towards the performance of a more complex GAA-JLT structure.
      1  20