Sohiful Anuar Zainol Murad
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Preferred name
Sohiful Anuar Zainol Murad
Official Name
Sohiful Anuar, Zainol Murad
Alternative Name
Murad, S. A.Zainol
Murad, S. A.Zainol
Anuar, Zainol Murad Sohiful
Zainol Murad, S.A.
Sohiful, Z. M.A.
Main Affiliation
Scopus Author ID
16643180100
Researcher ID
I-1082-2019

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  • Publication
    Design of High-Quality Factor Active Indictor Using CMOS 0.18-μm Technology for 5G Applications
    ( 2022-01-01)
    Ali H.A.A.A.
    ;
    Sohiful Anuar Zainol Murad
    ;
    Ahmad Fariz Hasan
    ;
    Faizah Abu Bakar
    ;
    Sapawi R.
    This paper presents high quality factor of active inductor circuit for 5G application. The proposed circuit is based on the differential active inductor (DAI) topology. The DAI is designed using CMOS 0.18 μm technology. The quality factor (Q) can be tuned with the current source values, ranging from 0.5 mA to 3 mA, while the voltage can control the inductance values L. Meanwhile, the frequency range can be controlled with the feedback resistance. The simulation results indicate that the Q factor as large as 262.5k can be achieved with inductor values of 10 nH at frequency 3.2 GHz. In addition, the Q factor of 1650 is obtained at 3.5 GHz. The performance comparison with previously published works is also demonstrated and found that the proposed DAI is suitable for 5G application.
      3
  • Publication
    Design of High-Quality Factor Active Indictor Using CMOS 0.18-μm Technology for 5G Applications
    ( 2022-01-01)
    Ali H.A.A.A.
    ;
    Sohiful Anuar Zainol Murad
    ;
    Hasan A.F.
    ;
    Faizah Abu Bakar
    ;
    Sapawi R.
    This paper presents high quality factor of active inductor circuit for 5G application. The proposed circuit is based on the differential active inductor (DAI) topology. The DAI is designed using CMOS 0.18 μm technology. The quality factor (Q) can be tuned with the current source values, ranging from 0.5 mA to 3 mA, while the voltage can control the inductance values L. Meanwhile, the frequency range can be controlled with the feedback resistance. The simulation results indicate that the Q factor as large as 262.5k can be achieved with inductor values of 10 nH at frequency 3.2 GHz. In addition, the Q factor of 1650 is obtained at 3.5 GHz. The performance comparison with previously published works is also demonstrated and found that the proposed DAI is suitable for 5G application.
  • Publication
    Design of High-Quality Factor Active Indictor Using CMOS 0.18-μm Technology for 5G Applications
    ( 2022-01-01)
    Ali H.A.A.A.
    ;
    Sohiful Anuar Zainol Murad
    ;
    Ahmad Fariz Hasan
    ;
    Faizah Abu Bakar
    ;
    Sapawi R.
    This paper presents high quality factor of active inductor circuit for 5G application. The proposed circuit is based on the differential active inductor (DAI) topology. The DAI is designed using CMOS 0.18 μm technology. The quality factor (Q) can be tuned with the current source values, ranging from 0.5 mA to 3 mA, while the voltage can control the inductance values L. Meanwhile, the frequency range can be controlled with the feedback resistance. The simulation results indicate that the Q factor as large as 262.5k can be achieved with inductor values of 10 nH at frequency 3.2 GHz. In addition, the Q factor of 1650 is obtained at 3.5 GHz. The performance comparison with previously published works is also demonstrated and found that the proposed DAI is suitable for 5G application.
      1