Now showing 1 - 2 of 2
  • Publication
    Film bulk acoustic wave resonator in 10-20 GHz frequency range
    This paper presents the design and optimisation of film bulk acoustic wave resonator (FBAR) using nano electro mechanical systems (NEMS) technology in 10-20 GHz frequency band. The effect of thickness, width and length and damping factor of the FBAR are analysed. The air-gap FBAR are designed due its ability to achieve high quality (Q) factor in 10-20 GHz frequency band. The proposed designs achieve a constant electromechanical coupling coefficient for 10-20 GHz. Analysis shows the Q varies highly dependent on the damping factor. The results show that the proposed design achieves almost double the Q factor at 15 GHz and 20 GHz operation when compared to similar designs.
      2  30
  • Publication
    Analysis of different piezoelectric materials on the film bulk acoustic wave resonator
    ( 2023-12) ; ; ;
    M. S. Mispan
    ;
    N. Aiman Syahmi
    The performance of film bulk acoustic wave resonators (FBAR) is greatly dependent on the choice of piezoelectric materials. Different piezoelectric materials have distinct properties that can impact the performance of FBAR. Hence, this work presents the analysis of three different piezoelectric materials which are aluminum nitride (AlN), scandium aluminum nitride (ScAlN) and zinc oxide (ZnO) on the performance of FBARs working at resonance frequencies of 6 GHz until 10 GHz. The one-dimensional (1-D) modelling is implemented to characterize the effects of these materials on the quality (Q) factor, electromechanical coupling coefficient (k2eff) and bandwidth (BW). It is determined that employing ScAlN in FBAR results in the highest Q factor, ranges from 628 to 1047 while maintaining a relatively compact area (25 μm × 25 μm) and thickness (430 nm to 720 nm). However, ScAlN yields the narrowest BW, measuring 0.11 GHz at 6 GHz, as opposed to AlN and ZnO, which exhibit broader bandwidths of 0.16 GHz and 0.23 GHz, respectively.
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