Muammar Mohamad Isa
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Preferred name
Muammar Mohamad Isa
Official Name
Muammar , Mohamad Isa
Alternative Name
Isa, M. M.
Mohamad Isa, M.
Isa, Muammar Mohamad
Mohamad Isa, Muammar
Isa, M. Mohamad
Main Affiliation
Scopus Author ID
57202563525
Researcher ID
N-2105-2017

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  • Publication
    Silicon Self-Switching Diode (SSD) as a Full-Wave Bridge Rectifier in 5G Networks Frequencies
    ( 2022-12-01)
    Yi Liang T.
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Singh A.K.
    The rapid growth of wireless technology has improved the network’s technology from 4G to 5G, with sub-6 GHz being the centre of attention as the primary communication spectrum band. To effectively benefit this exclusive network, the improvement in the mm-wave detection of this range is crucial. In this work, a silicon self-switching device (SSD) based full-wave bridge rectifier was proposed as a candidate for a usable RF-DC converter in this frequency range. SSD has a similar operation to a conventional pn junction diode, but with advantages in fabrication simplicity where it does not require doping and junctions. The optimized structure of the SSD was cascaded and arranged to create a functional full-wave bridge rectifier with a quadratic relationship between the input voltage and outputs current. AC transient analysis and theoretical calculation performed on the full-wave rectifier shows an estimated cut-off frequency at ~12 GHz, with calculated responsivity and noise equivalent power of 1956.72 V/W and 2.3753 pW/Hz1/2, respectively. These results show the capability of silicon SSD to function as a full-wave bridge rectifier and is a potential candidate for RF-DC conversion in the targeted 5G frequency band and can be exploited for future energy harvesting application.
  • Publication
    Hybrid Statistical and Numerical Analysis in Structural Optimization of Silicon-Based RF Detector in 5G Network
    ( 2022-02-01)
    Yi Liang T.
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Singh A.K.
    ;
    Sobri S.A.
    In this study, a hybrid statistical analysis (Taguchi method supported by analysis of variance (ANOVA) and regression analysis) and numerical analysis (utilizing a Silvaco device simulator) was implemented to optimize the structural parameters of silicon-on-insulator (SOI)-based self-switching diodes (SSDs) to achieve a high responsivity value as a radio frequency (RF) detector. Statistical calculation was applied to study the relationship between the control factors and the output performance of an RF detector in terms of the peak curvature coefficient value and its corresponding bias voltage. Subsequently, a series of numerical simulations were performed based on Taguchi’s experimental design. The optimization results indicated an optimized curvature coefficient and voltage peak of 26.4260 V−1 and 0.05 V, respectively. The alternating current transient analysis from 3 to 10 GHz showed the highest mean current at 5 GHz and a cut-off frequency of approximately 6.50 GHz, indicating a prominent ability to function as an RF detector at 5G related frequencies.
  • Publication
    Simulation of unipolar planar device with asymmetrical barrier profile: a planar barrier diode
    (AIP Publishing, 2017-09-26)
    Zarimawaty Zailan
    ;
    Shahrir Rizal Kasjoo
    ;
    Nor Farhani Zakaria
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Sanna Taking
    By introducing a funnel-shape semiconductor channel to create an asymmetrical energy barrier profile, a type of nonlinear device has been proposed and simulated which is referred as planar barrier diode (pbd). An applied voltage v across a pbd provides different height of the barrier depending on the sign of v. This results in a nonlinear current-voltage characteristic that resembles a typical diode behavior and therefore it can be used in signal rectification. The intrinsic cut-off frequency obtained in the simulation of the p-type silicon pbd rectifier was ∼15 ghz.
      3
  • Publication
    Rectification performance of self-switching diode in various geometries using ATLAS simulator
    (IEEE, 2017-01-03)
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Zarimawaty Zailan
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Sanna Taking
    Characterization on a planar nano-device, known as self-switching diode (SSD) aimed for rectification application at high frequencies is reported. Simulation has been conducted on InGaAs-based SSD with 70 nm L-shaped channels using twodimensional (2D) ATLAS simulator. The current-voltage (I-V) characteristic of the device is found asymmetrical, similar to I-V behavior of a diode. The structure geometries of the channel are varied in term of channel length, channel width, and trenches width to observe the I-V behavior of the device. Furthermore, the curvature co-efficient of the SSD has been evaluated by extrapolating the simulated I-V graphs and the rectification performance of each configuration has been observed and concluded. The results obtained can assist the optimization in the design of the SSD to efficiently operate as microwave rectifier, especially in radio frequency harvesting application.
      3
  • Publication
    Rectification performance of self-switching diodes in silicon substrate using device simulator
    (Institute of Electrical and Electronics Engineers (IEEE), 2017-01-03)
    Zarimawaty Zailan
    ;
    Shahrir Rizal Kasjoo
    ;
    Nor Farhani Zakaria
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Sanna Taking
    A planar nanodevice, known as the self-switching diode (SSD) has been demonstrated to rectify electromagnetic signals at microwave and terahertz frequencies. This diode has a non-linear current-voltage (I-V) characteristic due to the structure of the device which consists of asymmetric nanochannel. To further explore the properties of SSD rectifiers, in this work, silicon-based SSDs with different dielectric materials that filled up the trenches of the devices were simulated using ATLAS device simulator under the temperature range of 250 K-500 K. The results showed that the rectification performance of the SSDs was deteriorated with increasing temperature for all dielectric materials which might be due to the thermal-activated electronic transport behavior of the devices.
      2
  • Publication
    Hybrid statistical and numerical analysis in structural optimization of silicon-based RF Detector in 5G Network
    ( 2022-02-01)
    Tan Yi Liang
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Arun Kumar Singh
    ;
    Sharizal Ahmad Sobri
    In this study, a hybrid statistical analysis (Taguchi method supported by analysis of variance (ANOVA) and regression analysis) and numerical analysis (utilizing a Silvaco device simulator) was implemented to optimize the structural parameters of silicon-on-insulator (SOI)-based self-switching diodes (SSDs) to achieve a high responsivity value as a radio frequency (RF) detector. Statistical calculation was applied to study the relationship between the control factors and the output performance of an RF detector in terms of the peak curvature coefficient value and its corresponding bias voltage. Subsequently, a series of numerical simulations were performed based on Taguchi’s experimental design. The optimization results indicated an optimized curvature coefficient and voltage peak of 26.4260 V−1 and 0.05 V, respectively. The alternating current transient analysis from 3 to 10 GHz showed the highest mean current at 5 GHz and a cut-off frequency of approximately 6.50 GHz, indicating a prominent ability to function as an RF detector at 5G related frequencies.
      4  3
  • Publication
    Silicon Self-Switching Diode (SSD) as a Full-Wave Bridge Rectifier in 5G networks frequencies
    ( 2022)
    Tan Yi Liang
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Arun Kumar Singh
    ;
    Mohd Khairuddin Md Arshad
    The rapid growth of wireless technology has improved the network’s technology from 4G to 5G, with sub-6 GHz being the centre of attention as the primary communication spectrum band. To effectively benefit this exclusive network, the improvement in the mm-wave detection of this range is crucial. In this work, a silicon self-switching device (SSD) based full-wave bridge rectifier was proposed as a candidate for a usable RF-DC converter in this frequency range. SSD has a similar operation to a conventional pn junction diode, but with advantages in fabrication simplicity where it does not require doping and junctions. The optimized structure of the SSD was cascaded and arranged to create a functional full-wave bridge rectifier with a quadratic relationship between the input voltage and outputs current. AC transient analysis and theoretical calculation performed on the full-wave rectifier shows an estimated cut-off frequency at ~12 GHz, with calculated responsivity and noise equivalent power of 1956.72 V/W and 2.3753 pW/Hz1/2, respectively. These results show the capability of silicon SSD to function as a full-wave bridge rectifier and is a potential candidate for RF-DC conversion in the targeted 5G frequency band and can be exploited for future energy harvesting application.
      2  13
  • Publication
    Improved rectification performance and terahertz detection in hybrid structure of self-switching device (SSD) and planar barrier diode (PBD) using two-dimensional device simulation
    ( 2020-01-01)
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Muammar Mohamad Isa
    ;
    Zarimawaty Zailan
    ;
    Mohd Khairuddin Md Arshad
    ;
    Song A.
    Recently, simulations of In0.48Ga0.52As-based Planar Barrier Diode (PBD) and Self- Switching Device (SSD) as millimeter-wave rectifiers were reported. Both PBD and SSD have a planar structure, but with different insulating shapes and working principles. In this work, a hybrid structure of the reported PBD and SSD in a parallel configuration is proposed, to exploit the advantages of each device. The advantages of high rectifying properties in the SSD and fast switching rate of the PBD are combined in this hybrid structure in order to obtain an improved rectification performance at zero-bias in the near terahertz frequency region. Analysis of the curvature co-efficient, γ, which is defined as the ratio of the second order to the first order derivative of the device’s I-V function was performed to evaluate the rectification performance. AC transient analyses were then executed in various frequencies to imitate the high-frequency signal inputs. By using this hybrid structure, the highest value of γ achieved has been improved to ~19 V-1 at 70 mV, and ~6 V-1 at zero- bias (compared to the previous results on PBDs). The estimated cut-off frequency obtained was ~360 GHz (0.36 THz), operating at zero-bias.
      2  12
  • Publication
    Numerical Simulation and Parameters Variation of Silicon Based Self-Switching Diode (SSD) and the Effect to the Physical and Electrical Properties
    ( 2020-12-14)
    Tan Y.L.
    ;
    Zakaria N.F.
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Rahim A.F.A.
    Investigation of SOI based self-switching diode (SSD) by numerical simulation for RF -DC harvesting application is presented. The rectification performance of the SSD is based on the curvature coefficient, ? and current responsivity, ß which are closely related to the I-V characteristic of a non-linear device. In this work, the structural parameters are varied to observe the electrical and physical characteristics with the aid of ATLAS Silvaco simulation tools. The rectification performance in each variation is then compared, with the highest value of ? and ß observed at 25.20 V and 12.60 V, respectively. By identifying and understanding these control factors and their effects, distinctive variations of the structural parameters by using a more deliberate optimization method can be proposed for further improvement on the rectification performance.
      15  3
  • Publication
    Hybrid statistical and numerical analysis in structural optimization of silicon-based RF detector in 5G network
    ( 2022-01-21)
    Tan Yi Liang
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Arun Kumar Singh
    ;
    Sharizal Ahmad Sobri
    In this study, a hybrid statistical analysis (Taguchi method supported by analysis of variance (ANOVA) and regression analysis) and numerical analysis (utilizing a Silvaco device simulator) was implemented to optimize the structural parameters of silicon-on-insulator (SOI)-based self-switching diodes (SSDs) to achieve a high responsivity value as a radio frequency (RF) detector. Statistical calculation was applied to study the relationship between the control factors and the output performance of an RF detector in terms of the peak curvature coefficient value and its corresponding bias voltage. Subsequently, a series of numerical simulations were performed based on Taguchi’s experimental design. The optimization results indicated an optimized curvature coefficient and voltage peak of 26.4260 V−1 and 0.05 V, respectively. The alternating current transient analysis from 3 to 10 GHz showed the highest mean current at 5 GHz and a cut-off frequency of approximately 6.50 GHz, indicating a prominent ability to function as an RF detector at 5G related frequencies.
      1  8