Aimi Noorliyana Hashim
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Preferred name
Aimi Noorliyana Hashim
Official Name
Aimi Noorliyana, Hashim
Alternative Name
Hashim, Aimi Noorliyana
Noorliyana Hashim, Aimi
Noorliyana, H. Aimi
Aimi Noorliyana, H.
Main Affiliation
Scopus Author ID
57060477400
Researcher ID
HSY-2766-2023

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Tin whiskers formation in Sn₀.₇Cu₀.₀₅Ni₁.₅Bi under electro-migration stressing

2020 , N.Z.M. Mokhtar , Mohd Arif Anuar Mohd Salleh , G.M. Zhang , D.M. Harvey , M. Nabialek , Aimi Noorliyana Hashim , S.F. Nazri

Stress induced by electrical current testing indeed has caused the formation of many whiskers growth in soldering applications. The aim of this investigation is to investigate the electrical current testing to the formation of whiskers. Also the mitigation could be achieved with the additional element of Nickel-Bismuth (Ni–Bi). Characterization of whisker growths are evaluated using the Scanning Electron Microscopy (SEM) on the deposits near anode and cathode areas. Synchrotron micro-XRF were performed on Sn₀.₇Cu₀.₀₅Ni₁.₅Bi at anode and cathode to accurately observe the distributions of elements in the sample. The obtained results demonstrate that the whisker growths with the effect of current stressing is associated with the intermetallic compound (IMCs) thickness on the anode and cathode areas. Finding shows that by addition of Ni-Bi elements can help to reduce the amount of whiskers form by refining the IMCs formation.

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Analysis on square and circular inductor for a high Q-factor inductor

2021-12 , Aimi Noorliyana Hashim , Nazuhusna Khalid , Nurul Izza Mohd Nor , Shahrir Rizal Kasjoo , Zaliman Sauli

This paper presents the high-quality (Q) factor inductors using Silicon-on-sapphire (SOS) for the 10GHz to 20GHz frequency band. Inductors are designed on SOS because of their advantages, including high resistivity and low parasitic capacitance. This paper compares square and circular inductor topologies for high-quality (Q) factor inductors using HFSS software for the high-frequency band. Both inductors have been designed with the same width and thickness to make them comparable with each other. The comparison shows that a circular inductor achieves the highest Q-factor. Furthermore, the circular and square inductor's Q-factor, inductance, and resistance are analyzed. As a result, the circular inductor has the maximum Q-factor of 89.34 at 10.6GHz for 0.29nH, while the square inductor has obtained a maximum Q-factor of 80.72 at 10GHz for 0.40nH inductance.

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Effect of Ni on the suppression of sn whisker formation in Sn-0.7Cu solder joint

2021 , Aimi Noorliyana Hashim , Mohd Arif Anuar Mohd Salleh , Andrei Victor Sandu , Muhammad Mahyiddin Ramli , Khor Chu Yee , Noor Zaimah Mohd Mokhtar , Jitrin Chaiprapa

The evolution of internal compressive stress from the intermetallic compound (IMC) Cu6Sn5 growth is commonly acknowledged as the key inducement initiating the nucleation and growth of tin (Sn) whisker. This study investigates the effect of Sn-0.7Cu-0.05Ni on the nucleation and growth of Sn whisker under continuous mechanical stress induced. The Sn-0.7Cu-0.05Ni solder joint has a noticeable effect of suppression by diminishing the susceptibility of nucleation and growth of Sn whisker. By using a synchrotron micro X-ray fluorescence (µ-XRF) spectroscopy, it was found that a small amount of Ni alters the microstructure of Cu6Sn5 to form a (Cu,Ni)6Sn5 intermetallic layer. The morphology structure of the (Cu,Ni)6Sn5 interfacial intermetallic layer and Sn whisker growth were investigated by scanning electron microscope (SEM) in secondary and backscattered electron imaging mode, which showed that there is a strong correlation between the formation of Sn whisker and the composition of solder alloy. The thickness of the (Cu,Ni)6Sn5 IMC interfacial layer was relatively thinner and more refined, with a continuous fine scallop-shaped IMC interfacial layer, and consequently enhanced a greater incubation period for the nucleation and growth of the Sn whisker. These verification outcomes proposes a scientifically foundation to mitigate Sn whisker growth in lead-free solder joint.

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Investigate the liberation of copper from waste Printed Circuit Boards (PCBs)

2010-06-09 , Mohd Zaheruddin Kasmuin , Aimi Noorliyana Hashim , M. Fazlul Bari , Sri Asliza M. , Faizul Che Pa , Kamarudin Hussin

Nowadays the waste PCBs increasing sharply proportionally the number of personal computers which is 5.7 million in 2005 and the predict amounts, it will be increase to 11.5 Million in 2010 (Unit Perancangan Ekonomi, 2006). From that figure it shows that, computer or Printed Circuit Board (PCB) which is one of the electric and electronic components may cause environmental problems during the waste management phase if it is not properly pre treated. Considering of the environmental problem, recycling of waste PCBs is an important subject not only from the treatment for waste but also from the recovery of valuable materials. The studies are focused on liberation size of copper in waste Printed Circuit Boards (PCBs). Waste PCBs sample were cut, dry crushed and ground down to assemble the criteria of liberation particle size of samples and sieved with the chosen size fraction. Samples were dissolved into aqua regia solution and analyzed with Atomic Absorption Spectroscopy (AAS) to determine the presence of valuable metals in solution that consists in samples. As well, light microscope was used to determine the degree of liberation of copper from PCBs particles. As the result it shows that Cu element (9.97%) is the highest metal composition in PCBs and it is very worth to recycle. At particles size 300 μm, it been seen from microscope that Cu particles start to fully liberated with metal and non-metal element.

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Effect of Ni on the suppression of Sn whisker formation in Sn-0.7Cu solder joint

2021 , Aimi Noorliyana Hashim , Mohd Arif Anuar Mohd Salleh , Andrei Victor Sandu , Muhammad Mahyiddin Ramli , Khor Chu Yee , Noor Zaimah Mohd Mokhtar , Jitrin Chaiprapa

The evolution of internal compressive stress from the intermetallic compound (IMC) Cu6Sn5 growth is commonly acknowledged as the key inducement initiating the nucleation and growth of tin (Sn) whisker. This study investigates the effect of Sn-0.7Cu-0.05Ni on the nucleation and growth of Sn whisker under continuous mechanical stress induced. The Sn-0.7Cu-0.05Ni solder joint has a noticeable effect of suppression by diminishing the susceptibility of nucleation and growth of Sn whisker. By using a synchrotron micro X-ray fluorescence (µ-XRF) spectroscopy, it was found that a small amount of Ni alters the microstructure of Cu6Sn5 to form a (Cu,Ni)6Sn5 intermetallic layer. The morphology structure of the (Cu,Ni)6Sn5 interfacial intermetallic layer and Sn whisker growth were investigated by scanning electron microscope (SEM) in secondary and backscattered electron imaging mode, which showed that there is a strong correlation between the formation of Sn whisker and the composition of solder alloy. The thickness of the (Cu,Ni)6Sn5 IMC interfacial layer was relatively thinner and more refined, with a continuous fine scallop-shaped IMC interfacial layer, and consequently enhanced a greater incubation period for the nucleation and growth of the Sn whisker. These verification outcomes proposes a scientifically foundation to mitigate Sn whisker growth in lead-free solder joint.

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Preliminary study on the effect of Ni addition on tin (Sn) whisker growth from lead-free solder coating

2020 , Aimi Noorliyana Hashim , Mohd Arif Anuar Mohd Salleh , Muhammad Mahyiddin Ramli , Khor Chu Yee , Noor Zaimah Mohd Mokhtar

It has been widely confirmed that alloying significantly can mitigate the formation of tin (Sn) whiskers and consequently became a possible candidate as a lead-free alloys coating material in the microelectronics industry. In this study, the effect of 0.05 wt.% Ni addition on the formation and growth of Sn whisker in Sn-0.7Cu solder coatings have been investigated under continuous mechanically stress induced at room temperature. It is clearly found that Ni addition have significantly enhanced stress relaxation by reducing the growth rate of formation Sn whiskers in Sn-0.7Cu solder coatings. The morphology of (Cu,Ni)6Sn5 interfacial IMC was more refine and thinner with a fine scallop-shaped interfacial intermetallic layer purposely to lower the compressive stress of Sn coating and extend the nucleation period, thus mitigating the formation and growth of Sn whiskers.

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A 12 GHz LC-VCO Implemented with S’ shape Inductor using silicon-on sapphire substrate

2022-12 , Nazuhusna Khalid , Aimi Noorliyana Hashim , Nurul Izza Mohd Nor , Shahrir Rizal Kasjoo , Zaliman Sauli , Mohd Norhafiz Hashim , M.S Mispan

A voltage-controlled oscillator (VCO) is an electronic oscillator whose oscillation frequency is controlled by a voltage input. In a VCO, low-phase noise while consuming less power is preferred. The tuning gain and noise in the control signal produce phase noise; more noise or tuning gain implies more phase noise. Sources of flicker noise (1/f noise) in the circuit, the output power level, and the loaded Q factor of the resonator are all crucial factors that influence phase noise. As a result, creating a resonator with a high Q-factor is essential for improving VCO performance. As a result, this paper describes a 12 GHz LC Voltage- Controlled Oscillator (VCO) employed with a ‘S’ shape inductor to improve phase noise and power performance. The phase noise for the VCO was reduced using a noise filtering technique. To reduce substrate loss and improve the Q factor, the inductor was designed on a high-resistivity Silicon-on Sapphire (SOS) substrate. At 12 GHz, the optimised S’ shape inductor has the highest Q-factor of 50.217. At 10 MHz and 100 MHz, the phase noise of the 12 GHz LC-VCO was -131.33 dBc/Hz and -156.71 dBc/Hz, respectively. With a 3.3 V power supply, the VCO core consumes 26.96 mW of power. Based on the findings, it is concluded that using an ‘S’ shape inductor in the VCO circuit will enable the development of low-cost, high-performance, very low-power system-on-chip wireless transceivers with longer battery life.

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Effect of isothermal annealing on Sn whisker growth behavior of Sn0.7Cu0.05Ni solder joint

2023 , Aimi Noorliyana Hashim , Mohd Arif Anuar Mohd Salleh , Muhammad Mahyiddin Ramli , Mohd. Mustafa Al Bakri Abdullah , Andrei Victor Sandu , Petrica Vizureanu , Ioan Gabriel Sandu

This paper presents an assessment of the effect of isothermal annealing of Sn whisker growth behavior on the surface of Sn0.7Cu0.05Ni solder joints using the hot-dip soldering technique. Sn0.7Cu and Sn0.7Cu0.05Ni solder joints with a similar solder coating thickness was aged up to 600 h in room temperature and annealed under 50 °C and 105 °C conditions. Through the observations, the significant outcome was the suppressing effect of Sn0.7Cu0.05Ni on Sn whisker growth in terms of density and length reduction. The fast atomic diffusion of isothermal annealing consequently reduced the stress gradient of Sn whisker growth on the Sn0.7Cu0.05Ni solder joint. It was also established that the smaller (Cu,Ni)6Sn5 grain size and stability characteristic of hexagonal η-Cu6Sn5 considerably contribute to the residual stress diminished in the (Cu,Ni)6Sn5 IMC interfacial layer and are able to suppress the growth of Sn whiskers on the Sn0.7Cu0.05Ni solder joint. The findings of this study provide environmental acceptance with the aim of suppressing Sn whisker growth and upsurging the reliability of the Sn0.7Cu0.05Ni solder joint at the electronic-device-operation temperature.

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A study on physical separation processes for recovery metals from waste printed circuit boards (PCBs)

2011 , Aimi Noorliyana Hashim

In view of increasing the waste PCBs, a physical separation process has been carried out to recover metals from waste PCBs. This research is aimed to implement an effective and environmental friendly recovery particularly cooper (Cu) of waste PCBs. The physical separation process begins with comminution to produce controlled particle size. Then, the separation process was divided into two parts according optimum efficiencies at specific size range. The size fraction -600+300µm and -1180+600µm were separated by gravity separation using Mozley laboratory separator. Afterwards, an enrichment step of concentrate fraction was done by magnetic separation using rare-earth roll magnetic separator. Meanwhile, the size fraction -150µm, -300+150µm, and -600+300µm were separated to froth flotation using Denver D-12 laboratory flotation cell. Characterisations of waste PCBs were performed by micrographic analysis and elemental analysis. A qualitative micrographic analysis was conducted using stereo- zoom microscope, optical microscope, and scanning electron microscopy. An elemental analysis was conducted using atomic absorption spectroscopy (AAS) analysis and energy dispersive spectrometer (EDS). Regarding on the particle size analysis, maximising recovery of physical separation is done by targeting recovery in a controlled four size range fraction; -150µm, -150+300µm, - 300+600µm and -600+1180µm. A qualitative liberation assessment of the waste PCBs particle was establish unliberated particles still remain in the waste PCBs fines (-75µm). As the highest metal element in waste PCBs, copper (Cu) recovery (R) and enrichment ratio (ER) was discussed with more emphasis in this project. By Mozley laboratory separator, Cu recovery increase from 80.85% (ER 2.07) at -600+300µm size fraction to 89.65% (1.93) at -1180+600µm size. Thus, the efficiency of gravity separation increases with increasing particle size. A significant of the low recovery at finer size fraction implies valuable metal loss at this size range, thereby be evidence that it is not very effective for finer particles (- 300µm) was recovered by Mozley laboratory separator. For enrichment step using Rareearth roll magnetic separator showed the enrichment ratio (ER) was highly improved. At - 600+300µm non-magnetic fraction, Cu enrichment ratio is 2.51 and 2.15 at -1180+600µm size fraction. Through the reverse froth flotation, higher Cu recovery (R) and lower Cu enrichment ratio (ER) are noticeably with increasing particle size fraction for both flotation conditions (with and without frother). Thus, the efficiency of froth flotation is higher at finer size fraction. At -75µm size fraction, Cu recovery is 84.66% (ER 3.03) under natural hydrophobic responds (without frother). Meanwhile with frother addition, Cu recovery is 82.16% (ER 3.37). In view of frother addition, there is improved in enrichment ratio but poor recovery percentage. Overall, the approach physical separation has high efficiency, easy to run and at same could recover metals and non-metals. It is expected that physical separation process will be developed for the upgrading of metals recovery in waste PCBs.

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