Shahrir Rizal Kasjoo
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Shahrir Rizal Kasjoo
Official Name
Shahrir Rizal, Kasjoo
Alternative Name
Kasjoo, S.
Kasjoo, Shahrir R.
Kasjoo, S. R.
Shah K.
Main Affiliation
Scopus Author ID
36809748400
Researcher ID
ABI-6061-2020

Research Output

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  • Publication
    Numerical Simulation and Characterization of Silicon Based OR Logic Gate Operation Using Self-Switching Device
    ( 2021-01-01)
    Goh Y.X.
    ;
    Zakaria N.F.
    ;
    Tan Y.L.
    ;
    Shahrir Rizal Kasjoo
    ;
    Shaari S.
    ;
    Muammar Mohamad Isa
    ;
    Singh A.K.
    Logic gates are the main components inside the integrated circuit used for almost every technological application. Nowadays, in order to enhance the performance of the smart device, while targeting in cut down of the fabrication cost and achieve low power consumption, lithography-based VLSI design technology on silicon are still being widely applied. Hence, an OR gate structure, a silicon based self-switching device (SSD) is introduced and investigated in this project. Such device is believed capable to act as an alternative for a low-powered logic gate application, suitable for CMOS devices. The SSD has an advantage in term of simplicity in fabrication process with a very low threshold voltage. Since SSD characteristics is similar to a conventional diode characteristic, the gate is designed in ATLAS Silvaco device simulator based on a diode logic to perform OR logic function after a validation of the physical and materials parameters. The electrical characterization and structural analysis were also done to observe the electrical performance and physical condition in the device. The simulated design showed a good OR logic output response with the inputs, and acceptable output ranged from around 4.5 to 4.8 V with 5 V HIGH inputs. The results from this OR gate characterization may assist in developing the logic gate for device integration and may act as a reference for future complex integrated circuit design.
  • Publication
    Terahertz Imaging Using Nanorectifier-Based Detectors and Broadband Thermal Sources
    ( 2023-12-01)
    Shahrir Rizal Kasjoo
    ;
    Singh A.K.
    ;
    Balocco C.
    ;
    Song A.
    Several terahertz imaging experiments have been conducted at room temperature using a self-switching diode (SSD) rectenna as a detector, and a broadband thermal source (at 610 °C) as a continuous-wave terahertz generator. Since the terahertz emission produced by the source is non-coherent with random polarizations and has a wide-ranging spectrum, the SSD-based rectenna employed in this work utilizes a planar spiral micro-antenna which has a circular polarization that able to effectively capture all incident radiation regardless of the angles. The antenna has been designed for a broadband frequency response in the range of 0.1-10 THz. This is to ensure the terahertz images produced are ascribed to the terahertz radiation collected by the antenna, but without eliminating the possibility of thermal effects at frequencies higher than the terahertz region. In order to further validate the results obtained, an Airy pattern experiment has been conducted. Based on this experiment, the effective frequency response of the SSD rectenna is estimated at 2.29 THz. The utilization of thermal source and micro-size rectenna in this work may pave the way to explore many opportunities in developing flexible, compact, and low-cost terahertz imaging systems without the use of expensive components (e.g., typically lasers are used as terahertz sources).
      43  1
  • Publication
    InGaAs Self-Switching Diode With Suppressed Harmonics For High Frequency Applications
    ( 2023-01-01)
    Sharma B.
    ;
    Garg S.
    ;
    Singh P.
    ;
    Garg S.
    ;
    Das G.
    ;
    Sharma D.K.
    ;
    Gupta N.
    ;
    Singh A.K.
    ;
    Kumar S.
    ;
    Shahrir Rizal Kasjoo
    In this study, a novel InGaAs-based nano- rectifier known as self-switching diode is presented to exhibit the suppressed harmonics for high frequency applications. The self-switching diode device exhibits current-voltage characteristics analogous to the conventional diodes, eliminating the need for a p-n junction and/or Schottky barrier. The direct and alternating current characteristics of the proposed device are investigated by filling its trenches with different dielectric materials. Further, the total harmonic distortion is quantified by implementing Fast Fourier Transform to estimate the corresponding harmonic components. The results suggest the introduction of dielectric materials with permittivity ranging from 1.0 to 9.3 into the trenches results in the significant reduction in total harmonic distortion from 69% to 60.4% at high frequencies.
      20  1
  • Publication
    Silicon Self-Switching Diode (SSD) as a Full-Wave Bridge Rectifier in 5G Networks Frequencies
    ( 2022-12-01)
    Yi Liang T.
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Singh A.K.
    The rapid growth of wireless technology has improved the network’s technology from 4G to 5G, with sub-6 GHz being the centre of attention as the primary communication spectrum band. To effectively benefit this exclusive network, the improvement in the mm-wave detection of this range is crucial. In this work, a silicon self-switching device (SSD) based full-wave bridge rectifier was proposed as a candidate for a usable RF-DC converter in this frequency range. SSD has a similar operation to a conventional pn junction diode, but with advantages in fabrication simplicity where it does not require doping and junctions. The optimized structure of the SSD was cascaded and arranged to create a functional full-wave bridge rectifier with a quadratic relationship between the input voltage and outputs current. AC transient analysis and theoretical calculation performed on the full-wave rectifier shows an estimated cut-off frequency at ~12 GHz, with calculated responsivity and noise equivalent power of 1956.72 V/W and 2.3753 pW/Hz1/2, respectively. These results show the capability of silicon SSD to function as a full-wave bridge rectifier and is a potential candidate for RF-DC conversion in the targeted 5G frequency band and can be exploited for future energy harvesting application.
      47  3
  • Publication
    Hybrid Statistical and Numerical Analysis in Structural Optimization of Silicon-Based RF Detector in 5G Network
    ( 2022-02-01)
    Yi Liang T.
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Singh A.K.
    ;
    Sobri S.A.
    In this study, a hybrid statistical analysis (Taguchi method supported by analysis of variance (ANOVA) and regression analysis) and numerical analysis (utilizing a Silvaco device simulator) was implemented to optimize the structural parameters of silicon-on-insulator (SOI)-based self-switching diodes (SSDs) to achieve a high responsivity value as a radio frequency (RF) detector. Statistical calculation was applied to study the relationship between the control factors and the output performance of an RF detector in terms of the peak curvature coefficient value and its corresponding bias voltage. Subsequently, a series of numerical simulations were performed based on Taguchi’s experimental design. The optimization results indicated an optimized curvature coefficient and voltage peak of 26.4260 V−1 and 0.05 V, respectively. The alternating current transient analysis from 3 to 10 GHz showed the highest mean current at 5 GHz and a cut-off frequency of approximately 6.50 GHz, indicating a prominent ability to function as an RF detector at 5G related frequencies.
      4  52
  • Publication
    Graphene self-switching diode-based thermoelectric rectifier
    ( 2020-09-30)
    Kaushal B.
    ;
    Garg S.
    ;
    Prakash K.
    ;
    Shahrir Rizal Kasjoo
    ;
    Kumar S.
    ;
    Gupta N.
    ;
    Singh A.K.
    This Letter demonstrates thermoelectric rectification in graphene self-switching diode (GSSD) on SiO2/Si substrate. Nanometre-scale nonlinear semiconductor device, called self-switching diode (SSD), has been utilised. Applied bias leads to a change in potential profile and effective channel width of GSSD resulting in diode like I-V characteristics. The excellent electronic properties of graphene potentially make it suitable for producing SSD's with high responsivity and low noise equivalent power (NEP). The designed GSSD demonstrates a high Seebeck coefficient (S) of 200 μV/K, voltage detection sensitivity, and NEP of 97.964 V/W and 0.6064 nW/Hz1/2, respectively. Furthermore, the effect of applying backgate voltage on the Seebeck coefficient has also been demonstrated in this work. The GSSD is presented as a potential thermoelectric rectifier, which can convert the thermal energy into useful electrical energy.
      3  20
  • Publication
    MoS2 Self-Switching Diode-Based Low Power Single and Three-Phase Bridge Rectifiers
    ( 2024-01-01)
    Garg S.
    ;
    Sharma B.
    ;
    Khanal G.M.
    ;
    Kumar S.
    ;
    Neena Gupta
    ;
    Shahrir Rizal Kasjoo
    ;
    Song A.
    ;
    Singh A.K.
    This work presents the molybdenum di-sulphide three-phase bridge rectifier integrated circuit utilizing the novel self-switching diode. The self-switching diode has a planar architecture having I-V behavior similar to an ideal diode. The structure of SSD is utilized to design single phase and three phase rectifiers. The performance in terms of rectification efficiency, total harmonic distortion, ripple factor and cut-off frequency has been evaluated and compared for both single and three phase SSDBR. The three-phase self-switching diode bridge rectifier (3P-SSDBR) has a cut-off frequency of ∼400 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 4.73% and 0.59, respectively. While, the single phase self-switching diode bridge rectifier (1P-SSDBR) has a cut-off frequency of ∼300 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 47.86% and 1.94, respectively. Further, to validate the obtained results, the simulation models have been calibrated with experimental and theoretical findings.
      5  21
  • Publication
    Fabrication process of InGaAs-based nanodiode array using electron-beam lithography technique
    ( 2020-06-16)
    Shahrir Rizal Kasjoo
    ;
    Singh A.K.
    ;
    Zhang L.Q.
    Self-switching diode (SSD) is a unipolar two-terminal planar device which has a typical channel in nanoscale dimension. It has shown outstanding properties as a microwave and submillimeter wave rectifier by exploiting its nonlinear current-voltage (I-V) characteristic and intrisically low parasitic capacitance. In detection systems, SSDs are often used with an antenna to form a rectifying antenna (rectenna). The large impedance mismatch between SSD and antenna, due to high resistance of a single SSD, has always hampered the rectenna to achieve good extrinsic rectification performance (e.g., voltage responsivity > 400 V/W). As such, a large array of SSDs connected in parallel is very much desired to reduce the device resistance, and hence minimizing the impedance mismatching issue. In this work, an interdigital structure which can accommodate approximately 2,000 SSDs in parallel has been utilized. The material used was InGaAs/InAlAs heterostructure grown onto an InP substrate. The fabrication of the SSD array has implemented an electron-beam lithography (EBL) technique and the use of polymethyl methacrylate (PMMA) as a masking layer. The fabricated SSD array has shown a typical diode-like I-V characteristic, indicating that EBL method is not only convenient to realize nanoscale electronic devices, but also very practical for large area operations.
      13  1
  • Publication
    Noise Properties of Unipolar Nanodiodes at Elevated Temperatures
    ( 2021-12-01)
    Shahrir Rizal Kasjoo
    ;
    Singh A.K.
    ;
    Balocco C.
    ;
    Song A.
    A unipolar nanodiode known as the self-switching diode has been demonstrated as a room-temperature terahertz detector, with its noise-equivalent-power value comparable to those of the state-of-the-art Schottky diodes. Here, we study its performance at elevated temperatures and show an unusual reduction in low-frequency noise, which may be useful for practical applications. The experiments suggest that the increased thermionic emissions result in the reduced device resistance and hence the lowered noise. The observed noise behavior appears to be in good agreement with Hooge’s mobility fluctuation theory.
      15  2