In this study, a novel InGaAs-based nano- rectifier known as self-switching diode is presented to exhibit the suppressed harmonics for high frequency applications. The self-switching diode device exhibits current-voltage characteristics analogous to the conventional diodes, eliminating the need for a p-n junction and/or Schottky barrier. The direct and alternating current characteristics of the proposed device are investigated by filling its trenches with different dielectric materials. Further, the total harmonic distortion is quantified by implementing Fast Fourier Transform to estimate the corresponding harmonic components. The results suggest the introduction of dielectric materials with permittivity ranging from 1.0 to 9.3 into the trenches results in the significant reduction in total harmonic distortion from 69% to 60.4% at high frequencies.
Funding(s)
Department of Science and Technology, Ministry of Science and Technology, India
