Shahrir Rizal Kasjoo
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Preferred name
Shahrir Rizal Kasjoo
Official Name
Shahrir Rizal, Kasjoo
Alternative Name
Kasjoo, S.
Kasjoo, Shahrir R.
Kasjoo, S. R.
Shah K.
Main Affiliation
Scopus Author ID
36809748400
Researcher ID
ABI-6061-2020

Research Output

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InGaAs Self-Switching Diode With Suppressed Harmonics For High Frequency Applications

2023-01-01 , Sharma B. , Garg S. , Singh P. , Garg S. , Das G. , Sharma D.K. , Gupta N. , Singh A.K. , Kumar S. , Shahrir Rizal Kasjoo

In this study, a novel InGaAs-based nano- rectifier known as self-switching diode is presented to exhibit the suppressed harmonics for high frequency applications. The self-switching diode device exhibits current-voltage characteristics analogous to the conventional diodes, eliminating the need for a p-n junction and/or Schottky barrier. The direct and alternating current characteristics of the proposed device are investigated by filling its trenches with different dielectric materials. Further, the total harmonic distortion is quantified by implementing Fast Fourier Transform to estimate the corresponding harmonic components. The results suggest the introduction of dielectric materials with permittivity ranging from 1.0 to 9.3 into the trenches results in the significant reduction in total harmonic distortion from 69% to 60.4% at high frequencies.

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Graphene self-switching diode-based thermoelectric rectifier

2020-09-30 , Kaushal B. , Garg S. , Prakash K. , Shahrir Rizal Kasjoo , Kumar S. , Gupta N. , Singh A.K.

This Letter demonstrates thermoelectric rectification in graphene self-switching diode (GSSD) on SiO2/Si substrate. Nanometre-scale nonlinear semiconductor device, called self-switching diode (SSD), has been utilised. Applied bias leads to a change in potential profile and effective channel width of GSSD resulting in diode like I-V characteristics. The excellent electronic properties of graphene potentially make it suitable for producing SSD's with high responsivity and low noise equivalent power (NEP). The designed GSSD demonstrates a high Seebeck coefficient (S) of 200 μV/K, voltage detection sensitivity, and NEP of 97.964 V/W and 0.6064 nW/Hz1/2, respectively. Furthermore, the effect of applying backgate voltage on the Seebeck coefficient has also been demonstrated in this work. The GSSD is presented as a potential thermoelectric rectifier, which can convert the thermal energy into useful electrical energy.

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MoS2 Self-Switching Diode-Based Low Power Single and Three-Phase Bridge Rectifiers

2024-01-01 , Garg S. , Sharma B. , Khanal G.M. , Kumar S. , Neena Gupta , Shahrir Rizal Kasjoo , Song A. , Singh A.K.

This work presents the molybdenum di-sulphide three-phase bridge rectifier integrated circuit utilizing the novel self-switching diode. The self-switching diode has a planar architecture having I-V behavior similar to an ideal diode. The structure of SSD is utilized to design single phase and three phase rectifiers. The performance in terms of rectification efficiency, total harmonic distortion, ripple factor and cut-off frequency has been evaluated and compared for both single and three phase SSDBR. The three-phase self-switching diode bridge rectifier (3P-SSDBR) has a cut-off frequency of ∼400 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 4.73% and 0.59, respectively. While, the single phase self-switching diode bridge rectifier (1P-SSDBR) has a cut-off frequency of ∼300 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 47.86% and 1.94, respectively. Further, to validate the obtained results, the simulation models have been calibrated with experimental and theoretical findings.

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