Prabakaran A/L Poopalan

Preferred name

Prabakaran A/L Poopalan

Official Name

Prabakaran, A/L Poopalan

Alternative Name

Poopalan, P.

Poopalan, Prabakaran A.L.

Poopalan, Prabakaran

Main Affiliation

Universiti Malaysia Perlis

Scopus Author ID

7003686974

Research Output

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Ga 2 O 3 thin films by sol-gel method its optical properties

( 2020-01-08)
Cheah L.
;
Rozana Aina Maulat Osman
;
Prabakaran A/L Poopalan

Gallium (III) oxide Ga2O3 is emerging in the field of wide bandgap semiconductor for various applications such as solar-blind photodetectors et al. because of its wide bandgap. For this reason, the optical properties of Ga2O3 by sol-gel method are analyzed. Ga2O3 thin films are prepared by spin coating method. The annealing temperature to make α-Ga2O3 is in the range of 450°C-550°C, where after 550°C, β-Ga2O3 is obtained as reported in reviewed works. Therefore, annealing temperatures of samples are set at 500°C, 700°C and 900°C. X-ray diffraction is performed to characterize the structure of the sample. The optical bandgap of Ga2O3 is calculated based on the transmittance value measured from UV-Visible spectrophotometer, which range from 4.8eV to 5.0eV.

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