Khairul Affendi Rosli
Thumbnail Image
Preferred name
Khairul Affendi Rosli
Official Name
Rosli, Khairul Affendi
Alternative Name
Rosli, K. A.
Main Affiliation
Scopus Author ID
57195989164
Researcher ID
CDN-6437-2022

Research Output

Filters

1
3
Reset filters

Settings
Now showing 1 - 3 of 3
  • Publication
    Design of A 20-Bit Chipless RFID Tag Utilizing Multiple Resonators in UWB Frequency Range
    ( 2023-01-01)
    Radhakrishna K.
    ;
    Khairul Najmy Abdul Rani
    ;
    Wahab A.A.
    ;
    Siti Julia Rosli
    ;
    Hasliza A Rahim @ Samsuddin
    ;
    Seng L.Y.
    ;
    Omar M.H.
    ;
    Khairul Affendi Rosli
    Radio frequency identification (RFID) is a growing technology for monitoring and recognizing objects, persons, or animals via wireless communications. Precisely, RFID can operate longer range and has an ability to be automated without human control. Chipless RFID tag basically is a RFID tag that does not require a microchip in the transponder. The major impediments in designing chipless RFID tag are data encoding and transmission. The passive chipless RFID tag can be fabricated on any substrate material without external operating circuit, which is different compared to a conventional chipped RFID tag. In this paper, 20 resonators are used to design a 20-bit chipless RFID tag, which operates at the ultra-wideband (UWB) frequency range between 3.00 and 10.00 GHz. It is found that the additional resonators can encode data and increase the chipless RFID tag's encoding capacity significantly. In sum, multiple resonators enable the chipless RFID tag to encode data at different operating frequencies.
      1
  • Publication
    Effect of channel length to the frequency response of Si-based Self-Switching Diodes using two-dimensional simulation
    ( 2020-12-18)
    Zarimawaty Zailan
    ;
    Shahrir Rizal Kasjoo
    ;
    Nurul Bariah Idris
    ;
    Khairul Affendi Rosli
    ;
    Nor Farhani Zakaria
    ;
    Muammar Mohamad Isa
    A planar nanodevice, known as the self-switching diode (SSD) which can be exploited as a high-speed rectifier in a wide range of applications. The non-linearity in the I-V characteristic of the SSD structure has been aimed for rectification application at GHz frequencies is reported. In this work simulation has been conducted on Si-based SSD structure with 230 nm L-shaped channels using ATLAS device simulator under the channel length range of 0.5 μm to 1.3 μm. Furthermore, the validity of the cut-off frequency has also been described using a theoretical value of f t at zero bias. The results showed that the optimization in the channel length of the SSD can assist the high cut-off frequency of SSD rectifying behavior to efficiently operate as microwave rectifier.
      5  42
  • Publication
    Fabrication of 110 Silicon Nanowire Oriented with Direct Band Gap
    ( 2020-12-18)
    Tijjani Adam
    ;
    Dhahi T.S.
    ;
    Khairul Affendi Rosli
    ;
    Jaafar M.
    ;
    Jaafar R.
    ;
    Mohd Fikri Che Husin
    ;
    Mohd Norhafiz Hashim
    ;
    Mohamad Rizal Abdul Rejab
    Today, the challenges of getting fast switching semiconductor device based device is the phonon generation mechanism for light-emitting by device such as diodes. The increase in efficiency of the device determine by the green light part of the emitted light spectrum. Silicon nanowire growth in the direction of 110 structure has indirect band gap, which tremendously improved the green emission efficiency at the lower Nano regime. Several band structure calculations have be predicted direct band for 110 growth silicon nanowire. Thus, the study report the fabrication of silicon nanowires with diameter between 20 to 50nm which demonstrate the direct nature of the band gap. A strong photoluminescence at wave spectrum of 597 nm with micro-second lifetime indicating it direct band gap. This study have demonstrated new nanostructure engineering based on silicon nanowire orientation which will allow new ways getting silicon nanowire functionality.
      7  22