ZnO/Si heterostracture has been constructed on (111) oriented silicon substrate using a pulsed Nd: YAG laser for the ablation of Zn target in the presence of oxygen as reactive atmosphere in order to prepare ZnO TCO's films. Were the electrical properties of these films have been invested reaching to the optimum oxygen pressure at which the device has been prepared. ZnO films, formed at 300 Torr oxygen ambient, showed an electrical resistivity of 0.27 Ω.cm, without using post-deposition heat treatment. The electrical properties of the preparation device have been carried out at different substrate temperatures. Also the detector parameter has been measured
