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  5. Multilayer antireflection coatings model for red emission of silicon for optoelectronic applications
 
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Multilayer antireflection coatings model for red emission of silicon for optoelectronic applications

Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
Date Issued
2009-01
Author(s)
Kifah Q. Salih
Universiti Malaysia Perlis
N. M. Ahmed
Universiti Malaysia Perlis
Abstract
A model, based on the Transfer Matrix Method (TMM) of multilayer is used to evaluate the transmittance at the central wavelength 720 nm of Si when using Ge, SiO2 nd Si as multilayer thin film coatings. In this study, the results indicate that the transmissivity of ~ (720-750) nm emission of Silicon as emitter is affected significantly by multilayer thin film coatings of Ge, SiO2 and Si. Si/SiO2/Air and Si?Ge/Si/SiO2/Air show high transmissivity 92% and ~100% at central wavelength design (720nm) respectively. Uncoated Si surface shows low transmissivity ~66%. The width of the high-transmittance region of Si/Ge/Si/SiO2/Air is less than Si/SiO2/Air. The origin of the red emission of Si has been investigated.
Subjects
  • Antireflection coatin...

  • Silicon active medium...

  • Transmissivity

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