A hot electron analytical model of quantum well high electron mobility transistor is
proposed. Our model takes into account the dependence of mobility on different scattering
mechanisms. The carrier scattering by polar optic phonons, acoustic deformation potential
and background ionized impurities are incorporated in the calculation of mobility considering
the carrier distribution to be heated drifted Fermi-Dirac distribution. The proposed model is
used to determine the drain current and transconductane of a AlxGa1-xAs/GaAs quantum well
high electron mobility transistor. The results obtained using our model is found to agree with
experimental results thereby establishing the validity of the proposed model.
