Electron transport analysis in quantum well HEMT with hot electron mobility model
Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
Date Issued
2012-07
Author(s)
Sanjoy Deb
Jadavpur University
N. Basanta Singh
Manipur Institute of Technology
A. K. De
National Institute of Technology
Subir Kumar Sarkar
Jadavpur University
Abstract
A hot electron analytical model of quantum well high electron mobility transistor is
proposed. Our model takes into account the dependence of mobility on different scattering
mechanisms. The carrier scattering by polar optic phonons, acoustic deformation potential
and background ionized impurities are incorporated in the calculation of mobility considering
the carrier distribution to be heated drifted Fermi-Dirac distribution. The proposed model is
used to determine the drain current and transconductane of a AlxGa1-xAs/GaAs quantum well
high electron mobility transistor. The results obtained using our model is found to agree with
experimental results thereby establishing the validity of the proposed model.
