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  5. Electrical characterization of reduced graphene oxide (rGO) on organic thin film transistor (OTFT)
 
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Electrical characterization of reduced graphene oxide (rGO) on organic thin film transistor (OTFT)

Journal
AIP Conference Proceedings
ISSN
0094243X
Date Issued
2017-03-13
Author(s)
Musa N.
Halim N.F.A.
Ahmad M.N.
Zakaria Z.
Hashim U.
DOI
10.1063/1.4975268
Handle (URI)
https://hdl.handle.net/20.500.14170/11734
Abstract
A green method and eco-friendly solution were used to chemically reduce graphene oxide (GO) to graphene using green reductant. In this study, graphene oxide (GO) were prepared by using Tours method. Then, reduced graphene oxides (rGO) were prepared by using three typical reduction agents: L-ascorbic acid (L-AA), formamidinesulfinic acid (FAS) and sodium sulfite (Na2SO3). The reduced materials were characterized by Fourier transform infrared spectroscopy (FTIR), Thermo gravimetric analysis (TGA) and X-ray diffraction (XRD). Graphene based organic thin film transistor (G-OTFT) was prepared by a spin coating and thermal evaporation technique. The electrical characterization of G-OTFT was analyzed by using semiconductor parameter analyzer (SPA). The G-OTFT devices show p-type semiconducting behaviour. This article focuses on the synthesis and reduction of graphene oxide using three different reductants in order to maximise its electrical conductivity. The rGO product demonstrated a good electrical conductivity performance with highly sensitivity sensor.
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Mar 5, 2026
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