Indium Tin Oxide (ITO) thin films at different tin doping of 0, 5, 10, 15, and 20 wt% were successfully prepared using Chemical Spray Pyrolysis (CSP) method. The peaks of X-ray Diffraction (XRD) indicate that all samples have polycrystalline cubic structure and the plane (222) is the preferential orientation. AFM examinations show that the root means square roughness of ITO thin films decreased with increasing tin doping and the grain size transformed from microstructure to nanostructure when tin-doped with indium oxide. The maximum transmittance value measured is approximately 80% for the infrared region, and the bandgap is equal to 3.5, 3.7, 3.67, 3.65, and 3.58 eV corresponding to the concentration 0, 5, 10, 15, and 20%. The current-Voltage (I-V) characteristics of ITO/p-Si hetero-junction for dark and illuminated conditions have been investigated.
