This work presents the effect of NH4OH molarities on the electrical characteristics of Nb₂O₅ films prepared using the precipitation method. Hall Effect measurements proved the formation of n-type Nb₂O₅ films. The carrier concentration was found to increase with ammonium hydroxide molarities up to 12mol/L, while the carrier mobility decreased. Resistivity-temperature measurements confirm the semiconductor behaviors of the thin films. It also shows a decrease in the resistivity and activation energy with molarity increasing reaching its minimum value in 12 mol /L then they increased again.
