Indium antimonide (InSb) thin films were prepared on glass substrates by flash evaporation technique of a stoichiometric bulk of InSb at different substrate temperatures Ts= (300,320,350)°C. Films thickness were in the range of t= (0.2 -0.6) µm. X-ray diffraction patterns on InSb powder and thin films were given. The patterns showed that all films were stoichiometric and the crytallinity degree was improved with increasing of the substrate temperature and film thickness. The Hall effect measurements at room temperature showed that all films have n-type conductivity except the film of 0.2 µm thickness prepared at Ts=350 °C was p-type conductivity. The electrical cnductivity was studied in temperature range (25-200) °C and it was decreased with increased the substrate temperature for all samples. The carrier's mobility at room temperature was found to be increased with film thickness and substrate temperature.
