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  4. International Journal of Nanoelectronics and Materials (IJNeaM)
  5. Annealing temperature effect on TeO₂ thin films for optical detection devices
 
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Annealing temperature effect on TeO₂ thin films for optical detection devices

Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
ISSN
1985-5761
Date Issued
2023-04
Author(s)
Ghadeer A. Moh
University of Technology, Baghdad, Iraq
Suad M. Kadhim
, University of Technology, Baghdad, Iraq
Hiba H. Abdullah
University of Technology, Baghdad, Iraq
Handle (URI)
https://ijneam.unimap.edu.my/index.php/vol-16-no-2-april-2023
https://ijneam.unimap.edu.my/
https://hdl.handle.net/20.500.14170/2931
Abstract
Physical vapor deposition method was used for the preparation of nanostructured TeO₂. Different morphologies of TeO₂ are synthesized using a physical evaporation method with Te powder as the source material and quartz SiO₂ as the growth substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and ultravioletvisible (UV–Vis) analyses are used to characterize the structural, morphological, and optical properties of the TeO₂ products obtained. By varying the annealing temperature, different morphology of TeO₂ structuresis investigated. TeO₂ nanostructure progress is initiated by the crystallization of particles. Different temperatures have different effects on structures, which are discussed. The films as deposited nature was amorphous; crystallization occurred at a higher annealing temperature (175°C). With an increase in annealing temperature, the TeO₂ films grain size increased. The research also points to the impact of post-deposition thermal annealing temperatures in excess of 100 °C in enhancing TeO₂ film characteristics.
Subjects
  • Annealing temperature...

  • Nanoparticles

  • Thin films

  • TeO₂

File(s)
Annealing temperature effect on TeO2 thin films for optical detection devices.pdf (919.12 KB)
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Nov 19, 2024
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