Publication:
The impact of high-k dielectric layers for SINW-FET biosensor performance improvement

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cris.author.scopus-author-id 57215140458
cris.author.scopus-author-id 56395434600
cris.author.scopus-author-id 57211870224
cris.author.scopus-author-id 57219031365
cris.author.scopus-author-id 57194735807
cris.author.scopus-author-id 7006558013
dc.contributor.author Shun M.W.
dc.contributor.author Mohamad Fathil M.F.
dc.contributor.author Md Arshad M.K.
dc.contributor.author Md Nor M.N.
dc.contributor.author Rahim R.A.
dc.contributor.author Gopinath S.C.B.
dc.date.accessioned 2024-12-14T08:07:09Z
dc.date.available 2024-12-14T08:07:09Z
dc.date.issued 2019-07-01
dc.description.abstract This paper demonstrated the application of several dielectric materials with different dielectric constant (k) (i.e. silicon dioxide (SiO2), aluminium oxide (Al2O3), and hafnium oxide (HfO2) with k values of 3.9, 9.0, and 25.0, respectively) on the silicon nanowire (SiNW) surface in order to study their effect on the performance of SiNW field-effect transistor (SiNW-FET) biosensor through simulation tool. The biosensor structure was designed and simulated in Silvaco ATLAS. Different interface charge (QF) values representing actual target biomolecules were applied onto different high-k dielectric materials surface covering the SiNW channel between drain and source as transducer for biomolecule interaction. With increase of k values exhibited by different high-k dielectric materials, the output drain currents (ID) of the biosensor were increased during detection of interface charges, which were applied on the surface of dielectric layers. Therefore, the biosensor’s performance toward detection of interface charges was improved especially when HfO2 was used as dielectric layer for the biosensor with device sensitivity and limit of detection (LOD) of 17.32 µA/e·cm2 and 1.82×1010 electronic charge/cm-2, respectively.
dc.identifier.doi 10.1109/SENSORSNANO44414.2019.8940073
dc.identifier.isbn [9781538656198]
dc.identifier.scopus 2-s2.0-85078173893
dc.identifier.uri https://hdl.handle.net/20.500.14170/11121
dc.relation.grantno undefined
dc.relation.ispartof 2019 IEEE International Conference on Sensors and Nanotechnology, SENSORS and NANO 2019
dc.relation.ispartofseries 2019 IEEE International Conference on Sensors and Nanotechnology, SENSORS and NANO 2019
dc.subject Biosensor | Device simulation | Field-effect transistor | High-k dielectric material | Silicon nanowire
dc.title The impact of high-k dielectric layers for SINW-FET biosensor performance improvement
dc.type Conference Proceeding
dspace.entity.type Publication
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.citation.number 8940073
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person.identifier.scopus-author-id 57215140458
person.identifier.scopus-author-id 56395434600
person.identifier.scopus-author-id 57211870224
person.identifier.scopus-author-id 57219031365
person.identifier.scopus-author-id 57194735807
person.identifier.scopus-author-id 7006558013
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