Abstract. A self-switching device (SSD) is a new device concept -which can be simply realized by forming insulating trenches into a semiconductor layer, using a single nanolithography process. SSDs can be utilized as rectifiers since the device's current-voltage (I-V) characteristic is comparable to that of a conventional diode. The simulation of two InGaAsbased SSDs with parallel connection using ATLAS device simulator for similar and different lengths of both SSDs (L1 and L2) is presented in this paper. The simulation results show that the InGaAs-based SSDs are able to operate up to sub-terahertz (THz) frequencies. As expected, lowering either L1 or L2 will not only increase the device’s cut-off frequency, fc, but also degrading the device’s rectification performance (i.e., reducing the value of curvature coefficient, γ). The highest cut-off frequency achieved in this work was 0.27 THz with γ ~18V-1 when L1 = 0.8 μm and L2 = 0.4 μm.
