In this study, statistical analysis using Taguchi's method was used to investigate the effects of various process parameters involved in metal assisted chemical etching (MACE) of silicon. The process parameters that include etching time and various etchant concentration were selected and visualized in Taguchi modelling. Each sample was then characterized using the field emission scanning electron microscopy (FESEM). All data was then analysed and evaluated using ANOVA and graph modelling in order to visualize the interaction of each model. Results showed that for etching rate, separation and size of Si nanowires, the predicted model is in agreement with the experimental data with R2 of 0.94, 0.99 and 0.98 respectively.
