In this paper, studied the effect of changing the laser energy on the properties of the prepared indium oxide thin (In2O3) which was deposited by pulsed laser deposition in silicon
bases. Due to unique properties of indium oxide (In2O3), the most important is the high electrical conductivity, and the continuous development of sensor material, which in turn leads to an improvement in sensitivity of the gas, which greatly affects the properties of the gas sensor. 2w1The pulsed laser deposition method was used to prepare In2O3 films (nanoparticles) using (Nd: YAG) laser with a wavelength of 1064 nm. The sample was characterized by using x-ray diffraction (XRD). The morphological properties indicate polycrystalline nature and microscope picture Electron scanning showed the formation of spherical nanoparticles with change in optical properties occurring while increasing laser energy and the examination of atomic force microscopy (AFM) showed that the films prepared by pulsed laser deposition technique have smaller number of grain size and homogeneously distributed, which indicates to the crystalline nature of the film.
