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Simulation and characterization of an inverter logic gate by utilizing InGaAs-based planar devices

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cris.virtual.department Universiti Malaysia Perlis
cris.virtual.department Universiti Malaysia Perlis
cris.virtual.department Universiti Malaysia Perlis
cris.virtualsource.department f999f221-ccb8-4cb5-aed9-3f99328e7356
cris.virtualsource.department d1d2940a-bd60-47c8-a84e-0b64261e1f27
cris.virtualsource.department 3c04ee0f-3e3b-4f9c-b5fb-88e80a258f69
dc.contributor.author Faradilla Aziz
dc.contributor.author Shahrir Rizal Kasjoo
dc.contributor.author Nor Farhani Zakaria
dc.contributor.author Fauzi Packeer
dc.contributor.author A. K. Singh
dc.date.accessioned 2024-10-14T02:30:27Z
dc.date.available 2024-10-14T02:30:27Z
dc.date.issued 2023-12
dc.description.abstract Electronic circuits known as logic gates can perform basic logical operations like inverters, AND, and OR gates. These logic gates serve as the basis for digital electronics, and they are a common component in various electronic devices, such as computers, smartphones, and other types of digital systems. This research presents an inverter logic gate made of planar devices, which have significantly simpler structures than multi-layered transistors and diodes, namely the self-switching diode (SSD) and side-gated transistor (SGT). The inverter logic gate is realized by simply connecting both SSD and SGT in parallel. The electrical characteristics and performances of the inverter logic gate are assessed based on InGaAs material using SILVACO Inc.'s ATLAS device simulator software. The simulation results show that the functionality of the proposed planar inverter is comparable to that of a conventional inverter logic gate based on the standard truth table of the device. This has demonstrated the feasibility of building logic gates using a combination of SSDs and SGTs. In addition, the planar structure of SSD and SGT allows for a relatively low-cost device fabrication process as well as offering a high-frequency operation due to low parasitic elements in the devices.
dc.identifier.uri https://ejournal.unimap.edu.my/index.php/ijneam/issue/view/43
dc.identifier.uri https://hdl.handle.net/20.500.14170/9475
dc.language.iso en
dc.relation.ispartof International Journal of Nanoelectronics and Materials (IJNeaM)
dc.relation.issn 1985-5761
dc.subject Inverter
dc.subject Self-switching diode
dc.subject Side-gated transistor
dc.title Simulation and characterization of an inverter logic gate by utilizing InGaAs-based planar devices
dc.type Resource Types::text::journal::journal article
dspace.entity.type Publication
oaire.citation.endPage 71
oaire.citation.issue Special Issue InCAPE 2023
oaire.citation.startPage 65
oaire.citation.volume 16
oairecerif.author.affiliation Universiti Malaysia Perlis
oairecerif.author.affiliation Universiti Malaysia Perlis
oairecerif.author.affiliation Universiti Malaysia Perlis
oairecerif.author.affiliation Universiti Sains Malaysia
oairecerif.author.affiliation Punjab Engineering College
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