The paper focuses on the effect of the crystalline structure and surface morphology on the electrical properties of Yttrium oxide (Y₂O₃) thin films. The impact on the change in substrate temperature from ambient to 650°C in low oxygen pressure (0.0034mbar) was realized by change in crystallinity and morphology. The XRD result shows the preferred orientation along the (400) plane. The effect of substrate temperature on the crystal structure has been studied and the same impact has been observed in film morphology using scanning electron microscopy. The higher dielectric constant of 21 was observed at room temperature deposition. The transfer characteristic of Y₂O₃ gate dielectric based Si-MOSFET gives current ratio (Iₒₙ/Iₒ𝒻𝒻) of 10⁷ and threshold voltage of -2.8V. Furthermore, from output characteristics, the obtained I_{dss} is 0.415 mA. The high Iₒₙ/Iₒ𝒻𝒻, makes it suitable for digital gates, optical electronics, SMPS and portable electronic applications.
