Structural direct current (DC) electrical and optical properties of thermally evaporated N-(p-dimethylaminobenzylidene)-p-nitroaniline (DBN) thin films have been studied. The crystal structure of DBN in both powder and thin films forms ins determined by the X-ray diffraction technique. The results showed that the material is polycrystalline in both powder and as-deposited thin films. The DBN in powder form has a triclinic crystal structure with a space group of P1. The crystallite size of the films is calculated as a function of both film thickness (250-1100 nm) and annealing temperatures (353, 373 and 393 K). The resistivity of DBN thin films is measured as a function of film thickness. The temperature dependence of DC electrical conductivity for DBN films is calculated with different film thickness. The temperature dependence of DBN thin films showed typical semiconductor behavior. The fims have two activation energy of conduction in the temperature range of (303-393 K). The two activation energies decease with increasing film thickness. The absorption coefficient and the optical band gap are estimated for DBN films.
