Graphene is widely used in electronic devices due to its outstanding electrical properties. Although numerous synthesis methods have been reported, to produce a cost-effective graphene device is still a challenge until laser scribed graphene was introduced. This new technique is still in the development stage to be utilized in various application. In this work, we synthesized laser scribed graphene by manipulating the intensity of laser beam to study differences in morphology, structure and impedance. Field Emission Scanning Electron Microscopy images show that laser scribed graphene are highly porous when fabricated at higher power. Raman spectrum suggested higher degree of graphitization was produced by increasing the laser power and the intensity ratio ID/IG remained at 0.99 indicating the crystallinity is constant. Furthermore, the I2D/IG which is less than 1 supporting that graphene produced are multilayered. In addition, the impedance study also supported that higher resistivity was obtained at lower power.
