Silicon thin films have been prepared on sapphire substrate using pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10-4 mbar within energy range from 400 to 800 mJ. A Q-switched Nd: YAG laser of wavelegth 1064 nm and 5 ns duration, 10 Hz) keeping the number of pulses fixed to 10 pulses has been used. The influences of the laser energy on the structural, morphological and optical properties of the Si thin films were investigated. Structural investigation was carried out using x-ray diffraction. Result shows, that film grown have a amorphous structure; the deposition parameters strongly affect the film surface topography film.
