Home
  • English
  • ÄŒeÅ¡tina
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • LatvieÅ¡u
  • Magyar
  • Nederlands
  • Português
  • Português do Brasil
  • Suomi
  • Log In
    New user? Click here to register. Have you forgotten your password?
Home
  • Browse Our Collections
  • Publications
  • Researchers
  • Research Data
  • Institutions
  • Statistics
    • English
    • ÄŒeÅ¡tina
    • Deutsch
    • Español
    • Français
    • Gàidhlig
    • LatvieÅ¡u
    • Magyar
    • Nederlands
    • Português
    • Português do Brasil
    • Suomi
    • Log In
      New user? Click here to register. Have you forgotten your password?
  1. Home
  2. Resources
  3. Journals
  4. International Journal of Nanoelectronics and Materials (IJNeaM)
  5. Spin coating technique for the synthesis of Hexagonal CdxZn1-xS decorated pure ZnO nanorods arrays
 
Options

Spin coating technique for the synthesis of Hexagonal CdxZn1-xS decorated pure ZnO nanorods arrays

Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
ISSN
1985-5765
Date Issued
2020-01
Author(s)
Araa Mebdir Holi
University of Al-Qadisiyah, Iraq
Asla Abdullah Al-Zahrani
Imam Abdulrahman bin Faisal University, Saudi Arabia
Handle (URI)
https://ijneam.unimap.edu.my/
https://ijneam.unimap.edu.my/images/PDF/IJNEAM%20JAN%202020%20Vol%2013/Vol_13_No_1_2020_13_121-130.pdf
https://hdl.handle.net/20.500.14170/15339
Abstract
The thin films of CdxZn1-xS, where x vary: 0.1, 0.3, 0.5, 0.7 and 0.9, have been synthesised by the spin coating technique using a ZnO nanorods/ITO glass as a substrate. The properties of structural, optical and photoelectrochemical have been studied. The pattern of X-ray diffraction of the optimum film Cd0.9Zn0.1S/ZnO NRs shows polycrystalline in nature and it has the favourite orientation laterally the (002) plane. The absorption edges of absorbance spectra of different x (CdxZn1-xS) shifts towards lower wavelength with the increase in Zn concentration and these spectra were utilized in determining energy bandgap. Investigation indicated that the bandgap value increases with an increase in Zn content. The result disclosed an acceptable improvement in the photocurrent density of Cd0.9Zn0.1S/ZnO NRs (0.47 mA/cm2) that was around 12 times greater than ZnO NRAs (0.04 mA/cm2).
Subjects
  • CdxZn1-xS

  • Spin-coating techniqu...

  • Photoelectrochemical ...

  • ZnO nanorod arrays

File(s)
Spin Coating Technique for the Synthesis (1023.59 KB)
google-scholar
Views
Downloads
  • About Us
  • Contact Us
  • Policies