In this work, preparation of titanium dioxide doped with tin oxide, SnO2/TiO2 thin films deposited onto silicon wafer via sol-gel method. Different amount of SnO2 was added (5 ml, 10ml and 15 ml) into parent solution. The obtained films were annealed at different temperature which is 400°C, 500°C and 600°C for 1 hour. Morphological and surface topography of the SnO2 doped TiO2 thin films were studied using Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). The annealed films shows non-uniform crack due to the mismatch of coefficient of thermal expansion (CTE) between SnO2/TiO2 thin films and silicon wafer.
