Responsivity and response time of nano silver oxide on silicon heterojunction detector
Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
ISSN
1985-5761
Date Issued
2018-12
Author(s)
Makram A. Fakhri
University of Technology, Baghdad
Najwan H. Numan
University of Technology, Baghdad
Qamar Q. Mohammed
University of Technology, Baghdad
Mustafa S. Abdulla
University of Technology, Baghdad
Omer S. Hassan
University of Technology, Baghdad
Saad A. Abduljabar
University of Technology, Baghdad
Abdulrahman A. Ahmed
University of Technology, Baghdad
Handle (URI)
Abstract
In this manuscript, nano and micro silver peroxide and silver oxide thin films have been deposited and grown using a Reactive Pulse Laser Diode (RPLD) technique. The peroxide of silver has been deposited on p-silicon substrates. Annealing of the films has been taken under vacuum above (200⁰C -600 ⁰C) to produce oxide films. The I-V characteristics were investigated and discussed. The better reverse current has been changed from 20μA to 16mA in the graph of the curve of the I-V characteristics, the current had changed proportionally with voltage. The responsivity sensing had been sensed more optically for green (560nm) and near IR (840nm).
Subjects
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