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  1. Home
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  4. International Journal of Nanoelectronics and Materials (IJNeaM)
  5. Niobium pentoxide thin film prepared using simple colloidal suspension for optoelectronic application
 
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Niobium pentoxide thin film prepared using simple colloidal suspension for optoelectronic application

Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
ISSN
1985-5761
Date Issued
2018-04
Author(s)
M. K. Abood
University of Technology, Baghdad
E. T. Salim
University of Technology, Baghdad
J. A. Saimon
University of Technology, Baghdad
Handle (URI)
https://ijneam.unimap.edu.my/
https://ijneam.unimap.edu.my/images/PDF/IJNEAM%20No.%202%202018%20April/Vol_11_No_2_2018_2_127-134.pdf
https://hdl.handle.net/20.500.14170/13824
Abstract
In this study, thin‐film microstructures of polymorphous niobium pentoxide were successfully prepared at a low temperature. Spin coating was employed to deposit the colloidal suspension before and after ultrasonic vibration. The deposited films were characterised and analysed by X‐ray diffraction, scanning electron microscopy, and spectrophotometry for optical investigation. Results show that the films prepared before ultrasonic vibration possess a smooth and uniform surface. By contrast, films that underwent further ultrasonic vibration exhibit an earth rock‐like structure and a highly oriented, void‐ and crack‐free surface. Both film structures indicate the formation of a monoclinic structure. Low energy gap values of approximately 2.5 eV and 2.25 eV are suitable for heterojunction optoelectronic applications; this condition was proven by the typical I‐V behaviours of the prepared heterojunction on the silicon substrate.
Subjects
  • Nb2O5

  • Thin films

  • Scanning electron mic...

  • Sol–Gel method

  • Niobic acid

  • Colloidal solution

File(s)
Niobium Pentoxide Thin Film Prepared (2.55 MB)
Views
10
Acquisition Date
Mar 5, 2026
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Downloads
10
Acquisition Date
Mar 5, 2026
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