Carbon nanotubes (CNT) have attracted considerable attention since their discovery [1]. This is due to their unique physical properties and many potential applications. CNT have been investigated for possible application as a field - emission electron source [2-6]. Use of CNT in nanoelectronics has been explored [7-10]. Various methods have been adopted to synthesize carbon nanotubes,. Some of the are arc discharge [11, 12], laser vaporization [13], pyrolysis [14], plasma-enhanced [15] or thermal chemical vapour deposition (CVD) [16,17]. The approach has been to use nanometer-sized metal catalysts on a substrate on which CNT have been grown. An oxidised silicon substrate with a thin film of iron on it has been used for this purpose [18]. Also catalytic chemical vapour disposition (CCVD) method has been considered to be economic route for synthesis of large scale CNT [19]. Here, growth of aligned carbon nanotube bundles is described. We have employed a silica gel film with nickel nanoparticles dispersed in it. Bundles CNT have been grown within the film. The individual nanotube has diameter about 15nm. Transmission electron micrographs indicate that these nanotubes are aligned. The surface electrical resistivity measured by placing electrodes on the gel film surface shows a variable range hopping mechanism to be operative.
