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  4. International Journal of Nanoelectronics and Materials (IJNeaM)
  5. Vacancy formation energy in disodium oxide at 0K
 
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Vacancy formation energy in disodium oxide at 0K

Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
ISSN
1985-5761
Date Issued
2020-10
Author(s)
V. P. Saleel Ahammad Saleel
Vellore Institute of Technology, India
R. D. Eithiraj
Vellore Institute of Technology, India
Handle (URI)
https://ijneam.unimap.edu.my/
https://ijneam.unimap.edu.my/images/PDF/IJNEAM%20OCT%202020/Vol_13_No_4_2020_4_653-658.pdf
https://hdl.handle.net/20.500.14170/15762
Abstract
A first-principles investigation for disodium oxide in a cubic lattice with Na+ defect, Face center defect, Na+ and O- vacancy, has been carried out by the PWscf (plane-wave self-consistent field) approach with standard local-density approximation (LDA) and generalized gradient approximation (GGA). The total energy, lattice constant, volume variations, cation defect, anion defect, vacancy defect and vacancy energy formation are calculated with relaxed supercell structure 1x1x1 of disodium oxide.The calculated total energy increases by increasing vacancy in supercell structure. O- vacancy formation energy is higher than the Na+ vacancy formation energy.
Subjects
  • Density functional th...

  • Plane-wave

  • Total energy calculat...

  • Defect formation ener...

  • Vacancy formation ene...

File(s)
Vacancy Formation Energy (281.82 KB)
Views
1
Acquisition Date
Mar 5, 2026
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