In this paper, the device performance in ultrascaled junctionless (JLT) over junction transistor (JT) are investigated using numerical TCAD Atlas 3D simulator software on 10 nm gate length. The main parameters of interest are analogue and radio frequency figure-of-merits. Result shows no significant advantage of JLT for analog and RF applications as compared to normal junction MOSFETs transistor. Slightly higher gate-to-gate capacitance in JLT architectures related to high doping in the channel, which is not beneficial for RF applications.
