Single-electron transistor (SET) is a key element in our research field where device operation is
based on one-by-one electron through the channel utilizing the Coulomb blockade effect. The
SET are often discussed as elements of nanometer scale because SET can be made very small
and can detect the motion of individual electrons. However, SET has low voltage gain, high input
impedances, and sensitive to random background charges. This makes it unlikely that SET
would ever replace field-effect transistor (FET) in applications where large voltage gain or low
output impedance is necessary. In this paper, we provide an overview of research developments
of SET The theoretical study of single electronics include orthodox theory, coulomb blockade,
tunneling effects, and Kondo effect are discussed. On the other hand, the methods for modeling
and simulation single-electron circuit are reviewed.
