This paper is a study of films of CdTe pure and doped with both atomic percentages concentration of Al and Sb (0.5% and 2.5%) of about 0.5 μm thickness. These films of CdTe were prepared by a thermal evaporation technique on glass substrate and both type of GaAS were deposited on wafers (p- and n-type). The substrate temperatures films were at room temperature (RT) and 423K. The energy dispersive X-ray analysis (EDX) technique was used to assess the role of the deposition parameters on the evolution of the films structure. Regarding the percentage comprised of prepared films, the outcomes data analysis for using this approach to scan the films prepared at various deposition conditions coincided with theoretical percentage values of Cd, Te, Al and Sb in pure and doped CdTe thin film. The heterojunction of CdTe/p- and n-GaAs was prepared and the surface morphology was investigated. The surface morphology of CdTe thin films was grown on glass and both types of GaAs were performed using nanoscanning electron microscope. In general, the results showed that the average grain size for doped film with Al and Sb is more than for pure films. All films are homogeneous and the average grain size of film doped with Sb is higher that for pure films. For pure CdTe/p-GaAs heterojunctions, as the substrate temperature increases, the average grain size of CdTe thin films are enlarged and become more homogeneous. The analysis of the findings of the present study suggests that these films can be used for fabrication of a variety of optoelectronic devices.
