This paper discusses the effect of a ZnGeN2 layer inserted into the wells of Type-I InGaN/GaN QWs LEDs on the electrical and optical properties by using the Silvaco TCAD Simulator. First, the new structure is compared to the standard type-I LED based on InGaN. We found that using ZnGeN2 layer in the In0.2Ga0.8N-QWs LED leads to wavelength extending from the blue to the red region. Next, we highlighted the effect of quantum well number and In-molar fraction in the wells of InxGa1-xN/ZnGeN2 type-II LEDs. As a result, increasing the number of wells from two to six QWs creates an extension of spontaneous emissions while keeping a low concentration of indium in the wells (x = 0.16) and improving the electrical and optical properties, as we found an improvement in light output power of 10.7% at 40Acm-2.
