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  5. Physical properties of Nb₂O₅ thin films prepared at 12M ammonium concentration
 
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Physical properties of Nb₂O₅ thin films prepared at 12M ammonium concentration

Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
ISSN
1985-5761
Date Issued
2018-12
Author(s)
M. K. Abood
University of Technology, Baghdad
M. H. A. Wahid
School of Microelectronic Engineering
J. A. Saimon
University of Technology, Baghdad
E. T. Salim
University of Technology, Baghdad
Handle (URI)
https://ijneam.unimap.edu.my/
https://ijneam.unimap.edu.my/images/PDF/EGM%20DEC%202018/Vol_11_SI_Dec18_237-244.pdf
https://hdl.handle.net/20.500.14170/16050
Abstract
The Nb₂O₅ films were successfully prepared on the quartz substrates using chemical method. Ammonium was used as a main raw material with niobic acid solution at 12 M concentration. The XRD results ensure the formation of the monoclinic crystalline structure of the niobium pentoxide. A wide optical band gap was obtained and found to be about 3.33 eV. Clear absorption in the UV region verifies wide range of the spectrum wavelength. The surface roughness measurement indicates a good uniformity and crack-free surface. The films exhibit almost constant optical conductivity irrespective of wavelength tunability.
Subjects
  • Thin film

  • Ammonium

  • Quartz substrates

  • Nb₂O₅

File(s)
Physical Properties of Nb2O5 Thin Films (1.15 MB)
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