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  5. Performance comparison between sapphire and SiC as substrate for GaN 2D photonic crystal
 
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Performance comparison between sapphire and SiC as substrate for GaN 2D photonic crystal

Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
ISSN
1985-5761
Date Issued
2020-12
Author(s)
Nur Dalila Mohd Zamani
Universiti Kebangsaan Malaysia
Dilla Daryha Berhanuddin
Universiti Kebangsaan Malaysia
Burhanuddin Yeop Majlis
Universiti Kebangsaan Malaysia
Ahmad Rifqi Md Zain
Harvard University
Handle (URI)
https://ijneam.unimap.edu.my/
https://ijneam.unimap.edu.my/images/PDF/Special%20Isssue%20IJNeaM%20(Disember%202020)/Vol_13_SI_Dec2020_67-74.pdf
https://hdl.handle.net/20.500.14170/15263
Abstract
In this work, we present a structure design L3 cavities of 2D photonic crystal on a triangular photonic crystal lattice on Gallium Nitride (GaN) with two different substrate sapphire and SiC. The designed was simulated with LUMERICAL finite different time domain (FDTD). The resonant wavelength and quality factor (Q-factor) of design PhC structure were studied. The forbidden region or stop band observed are between 420 to 520 nm. The performance of the Q-factor has been enhanced with sapphire and SiC substrate, where the highest Q-factor that obtained are 22 500 and 28 400 respectively.
Subjects
  • Photonic crystal

  • GaN

  • Sapphire

  • Silicon carbide

  • Q-Factor

File(s)
Performance Comparison between Sapphire and SiC (462.28 KB)
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