Galium doped at Bi-site of Bi1-xGaxFeO3 (BGFO) ceramics with x = 0.00, 0.01, 0.02 and 0.03was synthesized by the solid state reaction route. The effect of gallium on structural, microstructure, dielectric and magnetic properties have been investigated. Phases of BGFO were investigated via X-ray Diffractometer has confirmed the formation of a single phase of BGFO where x ≤ 0.02 is the solid solution limit of gallium. The grain size of BGFO is reduced with the increasing of the Ga concentration. Meanwhile dielectric measurements were performed by using Electrical Impedance Spectroscopy (EIS) at room temperature indicates the inversely proportional pattern for both dielectric constant and dissipation factor in frequency range up to 1MHz. Moreover, substitution in BFO showed a significant improvement in dielectric loss with increasing of Ga content. The magnetic measurement revealed an increase in Ga-content up to 0.02 at room temperature in BGFO can significantly induce the spontaneous magnetization and weak ferromagnetic behavior due to the collapse of spin cycloid structure and modification of antiparallel spin.
