Graphene grown on transition metal is known to be high in quality due to its controlled amount of defects and potentially used for many electronic applications. The transfer process of graphene grown on transition metal to a new substrate requires optimization in order to ensure that high graphene coverage can be obtained. In this work, an improvement in the graphene transfer process is performed from graphene grown on copper foil. It has been observed that the graphene coverage is affected by the pressure given to the top of PDMS to eliminate water and air between graphene and SiO2 (new substrate). This work experimented with different approaches to optimize the graphene coverage, and stamping method has proven to be the best technique in obtaining the largest graphene coverage. This work also highlights the elimination of impurities from graphene after the transfer process, known to be PMMA residues, which involved immersion of graphene in acetone. This method has improved the graphene conductivity.
