Structural, optical and electrical investigations of Cu<inf>2</inf>Zn<inf>1-x</inf>Cd<inf>x</inf>SnS<inf>4</inf>/Si quinternary alloy nanostructures synthesized by spin coating technique
Journal
Microsystem Technologies
ISSN
09467076
Date Issued
2017-06-01
Author(s)
Ibraheam A.S.
Al-Douri Y.
Hashim U.
Ameri M.
Bouhemadou A.
Khenata R.
DOI
10.1007/s00542-016-2986-0
Handle (URI)
Abstract
The Cu2Zn1-xCdxSnS4 quinternary alloy nanostructures with different Cd concentrations were grown using spin coating technique on n-type silicon (100) substrate, analysed and characterized by X-ray diffraction (XRD), Photoluminescence (PL) and Field Emission-Scanning Electron Microscopy (FE-SEM). The XRD peaks were shifted towards the lower angle side with increasing Cd concentration. The refractive index and optical dielectric constant are calculated. The electrical characterization of the Ag/n-Si/Cu2Zn1-xCdxSnS4/Ag diode through current to voltage (I–V) characterization shows the highest photo-response of (value if any) at Cu2Zn0.4Cd0.6SnS4 composition. The electrical characterization shows the highest photoresponse at Cu2Zn0.4Cd0.6SnS4 quinternary alloy.
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