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  5. Optical gain and confinement in gaas/algaas structure quantum well lasers
 
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Optical gain and confinement in gaas/algaas structure quantum well lasers

Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
ISSN
1985-5761
Date Issued
2018-01
Author(s)
F. Hadjaj
University of Bechar
A. Belghachi
University of Bechar
A. Helmaoui
University of Bechar
Handle (URI)
https://ijneam.unimap.edu.my/
https://ijneam.unimap.edu.my/images/PDF/IJNEAM%20No.%201%202018%20JAN/Vol_11_No_1_2018_7_61-70.pdf
https://hdl.handle.net/20.500.14170/13810
Abstract
In this paper we investigate the optical gain seen by the polarization modes for each of Transverse Electric (TE) and Transverse Magnetic(TM) of GaAs/Al0.32Ga0.68As quantumwell lasers. The factor confinement and modal gain of proposed structure also have been simulated. Comparison between the two structures (single and multiple quantum) were conducted in the effort to evaluate and understand their behavior. Results show that the optical gain offers a better value in TE mode than in TM mode. As a result of being on higher standard and having a better performance in both cases thus this study conclude that the multiple quantum well structures are a better designed choice compared to single quantum well structure.
Subjects
  • Confinement factor

  • Optical gain

  • Polarization

  • Quantum well laser

File(s)
Optical Gain and Confinement in Gaas (845.3 KB)
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