Publication:
Numerical Simulation and Characterization of Silicon Based OR Logic Gate Operation Using Self-Switching Device

cris.author.scopus-author-id 57449716700
cris.author.scopus-author-id 57191032557
cris.author.scopus-author-id 57222147695
cris.author.scopus-author-id 36809748400
cris.author.scopus-author-id 55807708700
cris.author.scopus-author-id 57202563525
cris.author.scopus-author-id 58263407400
cris.virtual.department Universiti Malaysia Perlis
cris.virtual.department Universiti Malaysia Perlis
cris.virtualsource.department d1d2940a-bd60-47c8-a84e-0b64261e1f27
cris.virtualsource.department 1aa53def-3957-48a5-9465-98ca44b7c11f
dc.contributor.author Goh Y.X.
dc.contributor.author Zakaria N.F.
dc.contributor.author Tan Y.L.
dc.contributor.author Shahrir Rizal Kasjoo
dc.contributor.author Shaari S.
dc.contributor.author Muammar Mohamad Isa
dc.contributor.author Singh A.K.
dc.date.accessioned 2024-10-03T06:44:39Z
dc.date.available 2024-10-03T06:44:39Z
dc.date.issued 2021-01-01
dc.description.abstract Logic gates are the main components inside the integrated circuit used for almost every technological application. Nowadays, in order to enhance the performance of the smart device, while targeting in cut down of the fabrication cost and achieve low power consumption, lithography-based VLSI design technology on silicon are still being widely applied. Hence, an OR gate structure, a silicon based self-switching device (SSD) is introduced and investigated in this project. Such device is believed capable to act as an alternative for a low-powered logic gate application, suitable for CMOS devices. The SSD has an advantage in term of simplicity in fabrication process with a very low threshold voltage. Since SSD characteristics is similar to a conventional diode characteristic, the gate is designed in ATLAS Silvaco device simulator based on a diode logic to perform OR logic function after a validation of the physical and materials parameters. The electrical characterization and structural analysis were also done to observe the electrical performance and physical condition in the device. The simulated design showed a good OR logic output response with the inputs, and acceptable output ranged from around 4.5 to 4.8 V with 5 V HIGH inputs. The results from this OR gate characterization may assist in developing the logic gate for device integration and may act as a reference for future complex integrated circuit design.
dc.identifier.scopus 2-s2.0-85124456444
dc.identifier.uri https://hdl.handle.net/20.500.14170/8787
dc.relation.funding Ministry of Higher Education, Malaysia
dc.relation.grantno undefined
dc.relation.ispartof International Journal of Nanoelectronics and Materials
dc.relation.ispartofseries International Journal of Nanoelectronics and Materials
dc.relation.issn 19855761
dc.subject ATLAS Silvaco device simulator | OR gate | SSD
dc.title Numerical Simulation and Characterization of Silicon Based OR Logic Gate Operation Using Self-Switching Device
dc.type Journal
dspace.entity.type Publication
oaire.citation.endPage 93
oaire.citation.issue Special Issue InCAPE
oaire.citation.startPage 87
oaire.citation.volume 14
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Universiti Malaysia Perlis
oairecerif.affiliation.orgunit Punjab Engineering College (Deemed to be University)
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oairecerif.author.affiliation #PLACEHOLDER_PARENT_METADATA_VALUE#
oairecerif.author.affiliation Universiti Malaysia Perlis
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oairecerif.author.affiliation Universiti Malaysia Perlis
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person.identifier.scopus-author-id 57449716700
person.identifier.scopus-author-id 57191032557
person.identifier.scopus-author-id 57222147695
person.identifier.scopus-author-id 36809748400
person.identifier.scopus-author-id 55807708700
person.identifier.scopus-author-id 57202563525
person.identifier.scopus-author-id 58263407400
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